Youdou Zheng

TL;DR: In this article, Wan and coworkers have synthesized a hollow octahedral structure of PAni using crystal-reductive Cu and showed that the template-removal step can result in the disorder or destruction of the mesostructures oraffect the chemical structure.

TL;DR: Single crystalline α-Ga2O3 epilayers are achieved on nonpolar ZnO (112̅0) substrates for the first time and a high performance Au/α-Ga3/ZnO isotype heterostructure-based Schottky barrier avalanche diode is demonstrated, holding promise for developing high performance solar-blind photodetectors.

TL;DR: The effect of doping and annealing on the optical and structural properties of single-crystal ZnO films has been investigated by means of X-ray diffraction (XRD), photoluminescence (PL) spectrum and atomic force microscopy (AFM) as mentioned in this paper.

TL;DR: In this paper, the fabrication of 2D molecular single-crystal semiconductors with precise layer definition by using a floating-coffee-ring-driven assembly is presented, where bilayer molecular films exhibit singlecrystalline features with atomic smoothness and high film uniformity over a large area; field effect transistors yield average and maximum carrier mobilities of 4.8 and 13.0 cm2 V−1 s−1, respectively.

TL;DR: In this article, the polarization effect within the AlGaN barrier was incorporated into calculation of the near-surface electrical field ES underneath the Schottky contact metal, which determined the field-dependent characteristics of reverse gate leakage current of high-frequency capacitance-voltage measurement combined with electrostatic analysis is used to estimate ES as a function of reverse bias voltage.