Journal ArticleDOI
The growth and annealing of single crystalline zno films by low-pressure mocvd
TLDR
The effect of doping and annealing on the optical and structural properties of single-crystal ZnO films has been investigated by means of X-ray diffraction (XRD), photoluminescence (PL) spectrum and atomic force microscopy (AFM) as mentioned in this paper.About:
This article is published in Journal of Crystal Growth.The article was published on 2002-08-01. It has received 135 citations till now. The article focuses on the topics: Photoluminescence & Annealing (metallurgy).read more
Citations
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Electroluminescent and transport mechanisms of n-ZnO∕p-Si heterojunctions
TL;DR: In this paper, the authors show that the visible electroluminescence (EL) at room temperature has been realized based on n-ZnO∕p-Si heterojunction, where the tunneling mechanism via deep-level states was the main conduction process at low forward bias, while space charge-limited current conduction dominated the carrier transport at higher bias.
Journal ArticleDOI
Correlation between green luminescence and morphology evolution of ZnO films
Jiandong Ye,S.L. Gu,Feng Qin,Shunming Zhu,S.M. Liu,Xin Zhou,Wei Liu,Liqun Hu,R. Zhang,Y. Shi,Y.D. Zheng +10 more
TL;DR: In this article, the surface morphology with different grain structures has been used to characterize the green photoluminescence of ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) at varied growth pressures.
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Epitaxial growth of ZnO films
TL;DR: In this article, the authors review the growth of ZnO epitaxial films by PLD, MBE, MOCVD and sputtering under their various aspects, substrates, precursors, reaction chemistry, assessment of the layers etc.
Journal ArticleDOI
Optical and Structural Properties of ZnO Thin Films Fabricated by Sol-Gel Method
TL;DR: In this paper, a hexagonal wurtzite structure was obtained for hexagonal ZnO thin films with lattice constants a = b = 3.260 A, c = 5.214 A, and the optical band gap energy of the thin films was found to be direct allowed transition 3.24 eV.
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Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique
Wei Liu,S.L. Gu,Jiandong Ye,Shunming Zhu,S. M. Liu,Xin Zhou,R. Zhang,Yumeng Shi,Y.D. Zheng,Y. Hang,Chuanwei Zhang +10 more
TL;DR: In this paper, the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZNO bulk substrate was reported.
References
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The Blue Laser Diode: GaN based Light Emitters and Lasers
Shuji Nakamura,Gerhard Fasol +1 more
TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
Journal ArticleDOI
High temperature excitonic stimulated emission from ZnO epitaxial layers
TL;DR: In this paper, the emission spectrum of high quality ZnO epilayers is studied from room temperature up to 550 K. At room temperature and low excitation power, a single emission peak is observed which may be identified with the free exciton from its peak energy and dependence on temperature.
Journal ArticleDOI
Control of preferred orientation for ZnOx films: control of self-texture
TL;DR: In this article, the preferred orientation of ZnOx films was controlled by radio frequency (RF) magnetron sputtering, and the growth mechanisms were made clear with respect to the density of surface energy.
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p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping.
TL;DR: In this paper, the p-type behavior in ZnO thin films, which are prepared by codoping method using Ga (donor) and N (acceptor) as the dopants, was realized.
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Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering
TL;DR: In this paper, high conductive films of Al-doped ZnO have been prepared by rf magnetron sputtering of a znO target with Al2O3 dopant of 1-2 wt% in content added.