Anhui Normal University

About: Anhui Normal University is a education organization based out in Wuhu, China. It is known for research contribution in the topics: Catalysis & Population. The organization has 7955 authors who have published 7309 publications receiving 117443 citations.

Hydrothermal preparation and optical properties of ZnO nanorods

Abstract: In the present paper, ZnO nanorods with the mean size of 50 nm × 250 nm were successfully synthesized via a hydrothermal synthesis route in the presence of cetyltrimethylammonium bromide (CTAB). ZnCl 2 and KOH were used as the starting materials and zinc oxide nanorods were obtained at 120 °C for 5 h. The product was characterized by means of X-ray powder diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). The optical properties of the product were studied. Some factors affecting the morphologies and optical properties were also investigated.

Tuning Electronic and Magnetic Properties of Early Transition Metal Dichalcogenides via Tensile Strain

Abstract: We have performed a systematic first-principles study of the effect of tensile strains on the electronic properties of early transition-metal dichalcogenide (TMDC) monolayers MX2 (M = Sc, Ti, Zr, Hf, Ta, Cr; X = S, Se, and Te). Our density-functional theory (DFT) calculations suggest that the tensile strain can significantly affect the electronic properties of many early TMDCs in general and the electronic bandgap in particular. For group IVB TMDCs (TiX2, ZrX2, HfX2), the bandgap increases with the tensile strain, but for ZrX2 and HfX2 (X=S, Se), the bandgap starts to decrease at strain 6% to 8%. For the group-VB TMDCs (TaX2), the tensile strain can either induce the ferromagnetism or enhance the existing ferromagnetism. For the group-VIB TMDCs (CrX2) the direct-to-indirect bandgap transition is seen upon application of the tensile strain, except CrTe2 whose bandgap decreases with the tensile strain even though the direct character of its bandgap is retained. Lastly, for the group-IIIB TMDCs (ScX2) in the T metallic phase, we find that the tensile strain has little effect on their electronic and magnetic properties. Our study suggests that strain engineering is an effective approach to modify electronic and magnetic properties of most early TMDC monolayers, thereby opening an alternative way for future optoelectronic and spintronic applications.