Grenoble Institute of Technology

About: Grenoble Institute of Technology is a education organization based out in Grenoble, France. It is known for research contribution in the topics: Hyperspectral imaging & Geology. The organization has 3427 authors who have published 5345 publications receiving 137158 citations. The organization is also known as: Grenoble INP.

Evaluation of Analog/RF Test Measurements at the Design Stage

Abstract: We present a method that is capable of handling process variations to evaluate analog/RF test measurements at the design stage. The method can readily be used to estimate test metrics, such as parametric test escape and yield loss, with parts per million accuracy, and to fix test limits that satisfy specific tradeoffs between test metrics of interest. Furthermore, it provides a general framework to compare alternative test solutions that are continuously being proposed toward reducing the high cost of specification-based tests. The key idea of the method is to build a statistical model of the circuit under test and the test measurements using nonparametric density estimation. Thereafter, the statistical model can be simulated very fast to generate an arbitrarily large volume of new data. The method is demonstrated for a previously proposed built-in self-test measurement for low-noise amplifiers. The result indicates that the new synthetic data have the exact same structure of data generated by a computationally intensive brute-force Monte Carlo circuit simulation.

Broken Symmetries, Zero-Energy Modes, and Quantum Transport in Disordered Graphene: From Supermetallic to Insulating Regimes

Abstract: The role of defect-induced zero-energy modes on charge transport in graphene is investigated using Kubo and Landauer transport calculations. By tuning the density of random distributions of monovacancies either equally populating the two sublattices or exclusively located on a single sublattice, all conduction regimes are covered from direct tunneling through evanescent modes to mesoscopic transport in bulk disordered graphene. Depending on the transport measurement geometry, defect density, and broken sublattice symmetry, the Dirac-point conductivity is either exceptionally robust against disorder (supermetallic state) or suppressed through a gap opening or by algebraic localization of zero-energy modes, whereas weak localization and the Anderson insulating regime are obtained for higher energies. These findings clarify the contribution of zero-energy modes to transport at the Dirac point, hitherto controversial.

A real-time control using wireless sensor network for intelligent energy management system in buildings

Abstract: Industrial evolution brings major new challenges due to increasing energy demands. This phenomenon encourages the improvement of control methodologies that reduce resource requirements. It has been lately observed that the building sector contributes considerably to final energy demand. For example, electricity used in France by this sector has reached 284TWh, accounting for 65% of all electricity consumed in 2007 (434TWh) [1], and this situation continues to increase. Moreover, the link between increased CO2 emissions and the use of energy is also considered, particularly in the building environment. 404 million tones of CO2 gas is emitted in France, and 22.6% originates from this sector [2].In the light of developments in microelectro-mechanical systems (MEMS), along with progress made in communication and embedded smart sensors, the building sector has a huge potential for mitigating demand. This paper deals with techniques and advanced load management strategies for BEMS. First, we present the architecture of this system that exploits several communication techniques. We then describe an application for a heating control which is based on the wireless sensor network (WSN). This application uses an innovative realtime control method that allows peak consumption to be reduced while maintaining thermal comfort. This method is tested and the experiment results demonstrate that the proposed method is able to control heating loads to adapt to any problems that may arise (by taking into account changing price, signals from energy provider and distribution system operator, etc).

Exclusion limits from data of directional dark matter detectors

Abstract: Directional detection is a promising search strategy to discover Galactic dark matter. Taking advantage on the rotation of the Solar System around the Galactic center through the dark matter halo, it allows us to show a direction dependence of weakly interacting massive particle (WIMP) events. Even though the goal of directional search is to identify a WIMP positive detection, exclusion limits are still needed for very low exposure with a rather large background contamination, such as the one obtained with prototype experiments. Data of directional detectors are composed of energy and a 3D track for all recoiling nuclei. However, to set robust exclusion limits, we focus on the angular part of the event distribution, arguing that the energy part of the background distribution is unknown. As the angular distributions of both background and WIMP events are known, a Bayesian approach to set exclusion limits is possible. In this paper, a new statistical method based on an extended likelihood is proposed, compared to existing ones, and is shown to be optimal. Eventually, a comprehensive study of the effect of a detector configuration on exclusion limits is presented. It includes the effect of having or not sense recognition, a finite angular resolution, taking into account energy threshold as well as some astrophysical uncertainties.

Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study

Abstract: We present the first computational study employing a full quantum transport model to investigate the effect of interface traps in nanowire InAs Tunnel FETs and MOSFETs. To this purpose, we introduced a description of interface traps in a simulator based on the NEGF formalism and on a 8×8 k·p Hamiltonian and accounting for phonon scattering. Our results show that: (a) even a single trap can detereorate the inverse sub-threshold slope (SS) of a nanowire InAs Tunnel FET; (b) the inelastic phonon assisted tunneling (PAT) through interface traps results in a temperature dependence of the Tunnel FETs IV characteristics; (c) the impact of interface traps on I off is larger in Tunnel FETs than in MOSFETs; (d) interface traps represent a sizable source of device variability.