Showing papers in "Microelectronics Journal in 1993"

TL;DR: In this paper, the preparation and properties of tantalum pentoxide (Ta 2 O 5 ) thin film have been studied with respect to its application as a capacitor dielectric material in low-power, high-density dynamic random access memories (DRAMs).

TL;DR: In this article, a new class of silicon hot-deterministic photodetectors with built-in light adaptation mechanisms is proposed. But the proposed devices use the same silicon structure operating in two or more operating modes of different sensitivity, with light-controllable switching between different modes.

TL;DR: In this paper, the features of power BMFETs are discussed for realistic cell structures, and the effect of the gaussian doping profile of the surface gate region on the blocking voltage is discussed for new BMFT structures halfway between standard vertical JFET and power BJTs.

TL;DR: In this article, a novel circuit configuration for realizing second-order lowpass, bandpass and high-pass filters in current-mode is presented, which uses a fourterminal floating nullor (FTFN) and four passive elements.

TL;DR: In this article, a power-parabolic growth law was derived for silicon oxide, which fits the growth curves with excellent accuracy and explains the 2D effects observed, such as the reduced growth rate at corners, trenches, and in windows close to the field oxide, and the encroachment of the field oxides in LOCOS processing.

TL;DR: In this article, the authors present a review of recent progress in power semiconductor technology, including the development of an array of chips that can control large amounts of energy with very little input power.

TL;DR: In this article, the preparation, morphology and basic electrical properties of carbon/polyesterimide (PEI) thin film resistors are presented, and the influence of carbon (conductive carbon black (CB) or graphite (G)) and the effect of an inorganic filler (TiO 2 ) on sheet resistance, normalized temperature dependence of resistance, durability to thermal shocks and moisture behaviour of two-and three-component systems are discussed.

TL;DR: A broad overview of modern discrete power semiconductor devices is given in this article, with a brief description of new developments for devices built from advanced semiconductor materials such as GaAs, SiC, and diamond, including high voltage intrinsic switches.

TL;DR: This paper contrasts and reports on currently favoured analogue testing methodologies, and includes a discussion, with reference to recent work undertaken by the authors, of the applicability of the power supply current monitoring technique.

TL;DR: In this paper, it is shown that the breakdown electric field is overestimated due to the resulting non-uniform stress, and charge density at breakdown is underestimated if the test structure layout is not accurately designed.

TL;DR: In this article, the temperature dependence of on-resistance in lowvoltage (100 V) power VDMOS transistors is studied, taking into account both device geometry and related electrical characteristics.

TL;DR: In this paper, the design rules, fabrication techniques and frequency evaluation of double barrier resonant tunnelling diodes are discussed, and new proposals in order to improve their frequency and power capabilities in the context of recent progress in strained layer epitaxy.

TL;DR: The advantages of behavioural modelling through the use of an Analog Hardware Description Language (AHDL) are presented with respect to other modelling techniques.

TL;DR: In this article, the growth kinetics of silicon oxidation in O 2 and oxynitridation in N 2 O are reported Chemical-physical analyses, performed by Auger electron spectrometry, show evidence of nitrogen piling up at the Si/dielectric interface on nitrided films.

TL;DR: This framework utilizes a stagewise approach to molecular computer development, beginning with a simulated integrated precursor architecture and proceeding to a bonafide integrated realization, and highlights powerful computational synergies that emerge from the domain complementarities of programmable and nonprogrammable modes of computing and from the fabrication complementarITIES of conventional and carbon-based technologies.

TL;DR: In this paper, the physical behavior of different lateral insulated gate bipolar transistor (LIGBT) structures is described, and a new modification of the basic LIGBT structure consisting of a buried layer, an auxiliary cathode and a highly doped sinker is proposed.

TL;DR: An automated visual inspection system for bonded IC wires uses high-contrast image capture, an algorithm for accurately measuring the bonding balls, and a wire inspection algorithm, which enables a fully automatic bonding system to be constructed.

TL;DR: The study presented shows that LCARs have better partitioning behavior than LFSRs, but only a small percentage of all the primitive machines of both types can be partitioned into primitive bit-slices.

TL;DR: A method for implementing a wide range of smooth nonlinear activation functions and their first derivatives in digital neural networks is presented that uses a simplified neural network which may share most of its components with the native neural network, so that it requires a small amount of additional hardware.

TL;DR: In this paper, the influence of the temperature, the applied field, and the process on the breakdown parameters of very thin oxides used in representative CMOS technologies is studied, and three temperature ranges with different activation energies are demonstrated, although the correlation between the bulk oxide trapped charge and breakdown vs temperature is shown.

TL;DR: In this paper, the wear-out properties of γ-irradiated oxides in MOS structures were investigated and it was found that although irradiation does not influence the breakdown characteristics of the oxide, the transient processes (observed via voltage behaviour) during high-field constant-current stressing can be significantly affected.

TL;DR: In this article, a separation and quantization of the effects of interface and gate oxide trap densities can be achieved by using scanning electron microscopy (SEM) tools, even in modern technologies.

TL;DR: In this paper, a novel circuit configuration for realizing current-mode filters using the OA pole is proposed, which realizes simultaneously high-pass, band-pass and low-pass transfer functions.

TL;DR: In this article, the authors report experimental and analytical results on a versatile type of semiconductor heterostructure that overcomes the difficulties of the optical transition between two states which are both above-barrier quasibounded states in the "classical" continuum.

TL;DR: In this article, a fully differential BiCMOS operational transconductance amplifier (OTA) was proposed for high-frequency data communication applications where moderate SNR is acceptable, and the tuning scheme was based on current steering resulting in the maximum input signal level being independent of tuning.

TL;DR: In this paper, a new approach for current deep-level transient spectroscopy (DLTS) in enhancement-mode MOSFETs is presented, which improves the modeling of the transient drain current by directly calculating the transient variation of the inversion charge instead of that of the threshold voltage.

TL;DR: In this article, the authors compared the rise and fall times of Schottky collector Heterojunction Bipolar Transistor (SCHBT) and conventional silicon-based Hetero junction bipolar transistor (CHBT).

TL;DR: In this paper, the role of defects and contamination in future submicron semiconductor manufacturing is investigated within the framework of global definitions, and it is found that control of contamination and reduction of defects, central to high yield manufacturing of state-of-the-art technologies, will become even more important in the future due to the strong interdependencies of defects with all phases of processing, devices and technology, and IC manufacturability.