23 GHz Ge/SiGe multiple quantum well electro-absorption modulator.
Papichaya Chaisakul,Delphine Marris-Morini,Mohamed-Said Rouifed,Giovanni Isella,Daniel Chrastina,Jacopo Frigerio,Xavier Le Roux,Samson Edmond,Jean-René Coudevylle,Laurent Vivien +9 more
TLDR
The high speed operation of a Ge/SiGe multiple quantum well (MQW) electro-absorption modulator in a waveguide configuration demonstrates the potentiality of Ge/ SiGe MQWs as a building block of silicon compatible photonic integrated circuits for short distance energy efficient optical interconnections.Abstract:
We report on high speed operation of a Ge/SiGe multiple quantum well (MQW) electro-absorption modulator in a waveguide configuration. 23 GHz bandwidth is experimentally demonstrated from a 3 µm wide and 90 µm long Ge/SiGe MQW waveguide. The modulator exhibits a high extinction ratio of more than 10 dB over a wide spectral range. Moreover with a swing voltage of 1 V between 3 and 4 V, an extinction ratio as high as 9 dB can be obtained with a corresponding estimated energy consumption of 108 fJ per bit. This demonstrates the potentiality of Ge/SiGe MQWs as a building block of silicon compatible photonic integrated circuits for short distance energy efficient optical interconnections.read more
Citations
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Attojoule Optoelectronics for Low-Energy Information Processing and Communications
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Attojoule Optoelectronics for Low-Energy Information Processing and Communications: a Tutorial Review
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Recent advances in silicon-based passive and active optical interconnects
Harish Subbaraman,Xiaochuan Xu,Amir Hosseini,Xingyu Zhang,Yang Zhang,David Kwong,Ray T. Chen +6 more
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Recent breakthroughs in carrier depletion based silicon optical modulators
Graham T. Reed,Goran Z. Mashanovich,Frederic Y. Gardes,Milos Nedeljkovic,Youfang Hu,David J. Thomson,Ke Li,Peter R. Wilson,Sheng-Wen Chen,Shawn S. H. Hsu +9 more
TL;DR: The majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide as discussed by the authors.
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Integrated germanium optical interconnects on silicon substrates
Papichaya Chaisakul,Delphine Marris-Morini,Jacopo Frigerio,Daniel Chrastina,Mohamed-Said Rouifed,Stefano Cecchi,Paul Crozat,Giovanni Isella,Laurent Vivien +8 more
TL;DR: The integration of germanium quantum-well devices and low-loss waveguides with silicon substrates shows promise for realizing low loss, on-chip photonic interconnects.
References
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Device Requirements for Optical Interconnects to Silicon Chips
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TL;DR: What is believed to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device is reported.
Journal ArticleDOI
Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
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TL;DR: The discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture.
Journal ArticleDOI
Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators
Jifeng Liu,M. Beals,Andrew Pomerene,Sarah Bernardis,Rong Sun,Jing Cheng,Lionel C. Kimerling,Jurgen Michel +7 more
TL;DR: In this paper, a waveguide-integrated GeSi electroabsorption modulator on silicon with an ultra-low energy consumption of 50 fJ-1bit was presented, operating in the spectral range of 1539-1553 nm.