Journal ArticleDOI
Integrated germanium optical interconnects on silicon substrates
Papichaya Chaisakul,Delphine Marris-Morini,Jacopo Frigerio,Daniel Chrastina,Mohamed-Said Rouifed,Stefano Cecchi,Paul Crozat,Giovanni Isella,Laurent Vivien +8 more
TLDR
The integration of germanium quantum-well devices and low-loss waveguides with silicon substrates shows promise for realizing low loss, on-chip photonic interconnects.Abstract:
The integration of germanium quantum-well devices and low-loss waveguides with silicon substrates shows promise for realizing low-loss, on-chip photonic interconnects.read more
Citations
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Journal ArticleDOI
On-chip light sources for silicon photonics
TL;DR: Zhou et al. as discussed by the authors assess the three main contenders for on-chip light sources: erbium-based light sources, germanium-on-silicon lasers and III-V-based silicon lasers.
Journal ArticleDOI
Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates
Leonetta Baldassarre,Emilie Sakat,Jacopo Frigerio,Antonio Samarelli,Kevin Gallacher,Eugenio Calandrini,Giovanni Isella,Douglas J. Paul,Michele Ortolani,Paolo Biagioni +9 more
TL;DR: This work fabricates antennas out of heavily doped Ge films epitaxially grown on Si wafers and demonstrates up to 2 orders of magnitude signal enhancement for the molecules located in the antenna hot spots compared to those located on a bare silicon substrate.
Journal ArticleDOI
Athermal Broadband Graphene Optical Modulator with 35 GHz Speed
TL;DR: In this article, an athermal graphene optical modulator with a 140 nm bandwidth and high temperature tolerance was presented. But the trade-off between speed and optical bandwidth was not considered, with a critical issue of temperature tolerance.
Journal ArticleDOI
Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band
TL;DR: A heterojunction photodetector made from germanium and perovskite layers can detect light in the visible and near-infrared ranges, showing potential for use in a wide range of applications, including in optical communications and next-generation optoelectronics.
Journal ArticleDOI
Electrically pumped lasing from Ge Fabry-Perot resonators on Si.
R. Koerner,Michael Oehme,Martin Gollhofer,Marc Schmid,Konrad Kostecki,Stefan Bechler,Daniel Widmann,Erich Kasper,Joerg Schulze +8 more
TL;DR: Room temperature lasing from electrically pumped n-type doped Ge edge emitting devices has been observed, and electroluminescence spectra of the devices showed optical bleaching and intensity gain for wavelengths between 1660 nm and 1700 nm, which fits the theoretically predicted behavior for the n- type Ge material system.
References
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Journal ArticleDOI
Device Requirements for Optical Interconnects to Silicon Chips
TL;DR: The current performance and future demands of interconnects to and on silicon chips are examined and the requirements for optoelectronic and optical devices are project if optics is to solve the major problems of interConnects for future high-performance silicon chips.
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Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
Journal ArticleDOI
Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
Yu-Hsuan Kuo,Yong Kyu Lee,Yangsi Ge,Shen Ren,Jonathan E. Roth,Theodore I. Kamins,Theodore I. Kamins,David A. B. Miller,James S. Harris +8 more
TL;DR: The discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture.
Journal ArticleDOI
High-quality Ge epilayers on Si with low threading-dislocation densities
Hsin-Chiao Luan,Desmond R. Lim,Kevin K. Lee,Kevin M. Chen,Jessica G. Sandland,Kazumi Wada,Lionel C. Kimerling +6 more
TL;DR: In this paper, a two-step ultrahigh vacuum/chemical-vapor-deposition process followed by cyclic thermal annealing was proposed for making high-quality epilayers on Si.
Journal ArticleDOI
Intrinsic Optical Absorption in Germanium-Silicon Alloys
TL;DR: In this paper, the intrinsic optical absorption spectrum for the germanium-silicon alloy system has been measured as a function of temperature and composition, with most of the variation occurring in the middle of the composition range.