Journal ArticleDOI
30 GHz GeSn photodetector on SOI substrate for 2 µ m wavelength application
Xiuli Li,Linzhi Peng,Zhi Liu,Zhiqi Zhou,Jun Zheng,Chunlai Xue,Yuhua Zuo,Baile Chen,Buwen Cheng +8 more
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TLDR
In this article, a normal-incidence p-i-n germanium-tin (Ge0.951Sn0.049) photodetector was demonstrated for 2-μm wavelength application.Abstract:
We report the demonstration of a normal-incidence p-i-n germanium-tin (Ge0.951Sn0.049) photodetector on silicon-on-insulator substrate for 2 μm wavelength application. The DC and RF characteristics of the devices have been characterized. A dark current density under −1 V bias of approximately 125 mA/cm2 is achieved at room temperature, and the optical responsivity of 14 mA/W is realized for illumination wavelength of 2 μm under −1 V reverse bias. In addition, a 3 dB bandwidth (f3 dB) of around 30 GHz is achieved at −3 V, which is the highest reported value among all group III–V and group IV photodetectors working in the 2 μm wavelength range. This work illustrates that a GeSn photodetector has great prospects in 2 μm wavelength optical communication.read more
Citations
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Proceedings ArticleDOI
Diode-pumped Wideband Thulium-doped Fiber Amplifiers for Optical Communications in the 1800 - 2050 nm Window
Journal ArticleDOI
Broadband Photodetector Based on Inorganic Perovskite CsPbBr3/GeSn Heterojunction
Hui Cong,Xinbo Chu,Fengshuo Wan,Zema Chu,Xiaoyu Wang,Yao Ma,Jizhong Jiang,Liang Shen,Jingbi You,Chunlai Xue +9 more
Journal ArticleDOI
High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response
TL;DR: In this paper , the authors demonstrate GeSn photodiodes grown on silicon wafers featuring a high broadband operation covering the extended-SWIR range with a peak responsivity of 0.3 A/W at room temperature.
Journal ArticleDOI
Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density
Chiao-Chun Chang,Hung Hsiang Cheng,Gary A. Sevison,Joshua R. Hendrickson,Zairui Li,Imad Agha,Jay Mathews,Richard A. Soref,Greg Sun +8 more
TL;DR: In this paper , an investigation on the photo response from a GeSn-based photodetector using a tunable laser with a range of incident light power was carried out, which indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities.
Journal ArticleDOI
Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 <i>μ</i>m for mid-infrared Si photonics
TL;DR: In this article , the structural properties of the GeSn layer are investigated, and the film is gradually relaxed along the thickness, reaching approximately 71.6% with Sn content increased from 11% to 14.3%.
References
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Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
TL;DR: In this article, the authors show that the current due to generation and recombination of carriers from generation-recombination centers in the space charge region of a p-n junction accounts for the observed characteristics.
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TL;DR: This work proposes that the ultimate limit to the attenuation of hollow-core photonic crystal fibres is determined by surface roughness due to frozenin capillary waves, and confirms the wavelength dependence of the minimum loss of fibres drawn to different scales.
Journal ArticleDOI
Approaching the Non-Linear Shannon Limit
TL;DR: In this article, the authors review the recent progress of information theory in optical communications and describe the current experimental results and associated advances in various individual technologies which increase the information capacity, and confirm the widely held belief that the reported capacities are approaching the fundamental limits imposed by signal-to-noise ratio and the distributed nonlinearity of conventional optical fibres, resulting in the reduction in the growth rate of communication capacity.
Journal ArticleDOI
High performance, waveguide integrated Ge photodetectors
Donghwan Ahn,Ching-yin Hong,Jifeng Liu,Wojciech Giziewicz,M. Beals,Lionel C. Kimerling,Jurgen Michel,Jian Chen,Franz X. Kärtner +8 more
TL;DR: A Ge p-i-n photodetector that is monolithically integrated with silicon oxynitride and silicon nitride waveguides, which facilitates the integration with CMOS circuits.
Journal ArticleDOI
Filling the Light Pipe
TL;DR: At this year's Optical Fiber Communication Conference (OFC 2010), several groups reported results within a factor of ∼2 of the ultimate capacity limits of existing optical fiber technology.