36 GHz submicron silicon waveguide germanium photodetector
Shirong Liao,Ning-Ning Feng,Dazeng Feng,Po Dong,Roshanak Shafiiha,Cheng-Chih Kung,Hong Liang,Wei Qian,Yong Liu,Joan Fong,John E. Cunningham,Ying Luo,Mehdi Asghari +12 more
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TLDR
By optimizing Ge thickness and offsetting the contact window, it is demonstrated that the responsivity of high speed waveguide-based Ge photodetectors integrated on a 0.25 μm silicon-on-insulator (SOI) platform can be improved from 0.6A/W to 0.95 A/W.Abstract:
We present two effective approaches to improve the responsivity of high speed waveguide-based Ge photodetectors integrated on a 0.25μm silicon-on-insulator (SOI) platform. The main cause of poor responsivity is identified as metal absorption from the top contact to Ge. By optimizing Ge thickness and offsetting the contact window, we have demonstrated that the responsivity can be improved from 0.6A/W to 0.95A/W at 1550nm with 36GHz 3dB bandwidth. We also demonstrate that a wider device with double offset contacts can achieve 1.05A/W responsivity at 1550nm and 20GHz 3dB bandwidth.read more
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Journal ArticleDOI
Zero-bias 40Gbit/s germanium waveguide photodetector on silicon.
Laurent Vivien,A. Polzer,Delphine Marris-Morini,Johann Osmond,Jean-Michel Hartmann,Paul Crozat,Eric Cassan,Christophe Kopp,Horst Zimmermann,Jean-Marc Fedeli +9 more
TL;DR: A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors selectively grown at the end of silicon waveguides using three kinds of experimental set-ups.
Journal ArticleDOI
Review of Silicon Photonics Foundry Efforts
Andy Eu-Jin Lim,Junfeng Song,Qing Fang,Chao Li,Xiaoguang Tu,Ning Duan,Kok Kiong Chen,Roger Poh Cher Tern,Tsung-Yang Liow +8 more
TL;DR: In this paper, a fabless foundry model using standardized process technology platforms is discussed, and key results from an on-going effort to set-up a manufacturing silicon photonics foundry line are presented.
Book
Silicon Photonics Design: From Devices to Systems
TL;DR: In this article, the authors present the state-of-the-art in the field of fabless silicon photonic systems, including the following: 1.1 Optical Waveguide Mode Solver 2.2 Wave Propagation 2.3 Optoelectronic models 2.4 Microwave Modelling 2.5 Thermal Modeling 2.6 Photonic Circuit Modelling 3.7 Physical Layout 2.8 Software Tools Integration 3.4 Code Listings 4.5 Problems 4.7 Problems 5.4 Polarization 5.5 Problem 5.6 Code List
Journal ArticleDOI
Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current
Christopher T. DeRose,Douglas C. Trotter,William A. Zortman,Andrew Starbuck,Moz Fisher,Michael R. Watts,Paul Davids +6 more
TL;DR: The low intrinsic capacitance of this photodiode may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.
Journal ArticleDOI
Review of Silicon Photonics Technology and Platform Development
S. Y. Siew,Bo Li,Feng Gao,H. Y. Zheng,Wei Zhang,P. Guo,S. W. Xie,A. Song,B. Dong,L. W. Luo,Chao Li,Xianshu Luo,Guo-Qiang Lo +12 more
TL;DR: In this article, the authors provide a comprehensive review of the development of silicon photonics and the foundry services which enable the productization, including various efforts to develop and release PDK devices.
References
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Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).
Journal ArticleDOI
Computer Systems Based on Silicon Photonic Interconnects
Ashok V. Krishnamoorthy,Ron Ho,Xuezhe Zheng,Herbert D. Schwetman,Jon Lexau,Pranay Koka,Guoliang Li,Ivan Shubin,John Cunningham +8 more
TL;DR: The power dissipation of a photonic link is explored, a roadmap to lower the energy-per-bit of silicon photonic interconnects is suggested, and the challenges that will be faced by device and circuit designers towards this goal are identified.
Journal ArticleDOI
High performance, waveguide integrated Ge photodetectors
Donghwan Ahn,Ching-yin Hong,Jifeng Liu,Wojciech Giziewicz,M. Beals,Lionel C. Kimerling,Jurgen Michel,Jian Chen,Franz X. Kärtner +8 more
TL;DR: A Ge p-i-n photodetector that is monolithically integrated with silicon oxynitride and silicon nitride waveguides, which facilitates the integration with CMOS circuits.
Journal ArticleDOI
42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide
Laurent Vivien,Johann Osmond,Jean-Marc Fedeli,Delphine Marris-Morini,Paul Crozat,Jean-Francois Damlencourt,Eric Cassan,Y. Lecunff,Suzanne Laval +8 more
TL;DR: A compact pin Ge photodetector is integrated in submicron SOI rib waveguide using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm.
Journal ArticleDOI
31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate.
TL;DR: Evanescently coupled Ge waveguide photodetectors that are grown on top of Si rib waveguides that have an optical bandwidth of 31.3 GHz at -2V for 1550nm are reported on.