Journal ArticleDOI
A -55 to + 200°C 12-Bit Analog-to-Digital Converter
TLDR
A 12-bit successive-approximation hybrid analog-to-digital (A/D) converter that is specified to operate over a temperature range of -55°C to + 200°C is described, since it is now possible to digitize the signal output from a transducer while it is downhole and thereby make the transmitted digital signal less susceptible to noise and interference.Abstract:
This paper describes the design of a 12-bit successive-approximation hybrid analog-to-digital (A/D) converter that is specified to operate over a temperature range of -55°C to + 200°C. This is an important development, especially for the oil well logging industry, since it is now possible to digitize the signal output from a transducer while it is downhole and thereby make the transmitted digital signal less susceptible to noise and interference. Details of the design and construction of the device as well as 1000-h life test data are presented.read more
Citations
More filters
Journal ArticleDOI
High-temperature silicon-on-insulator electronics for space nuclear power systems: requirements and feasibility
TL;DR: In this paper, the authors performed a study to determine whether silicon very large-scale integrated circuits (VLSICs) can survive the high temperature and total-dose radiation environments (up to 10 Mrad over a 7-10y system life) projected for a very high power space nuclear reactor platform.
Journal ArticleDOI
A 0.5-V Biomedical System-on-a-Chip for Intrabody Communication System
TL;DR: A low-voltage and low-power monolithic biomedical system-on-a-chip (SOC) consisting of a receiver, a transmitter, a microcontrol unit, and an analog-to-digital converter, implemented in a 0.18-μm CMOS technology for intrabody communication is first reported.
Journal ArticleDOI
Downhole Electronics Cooling Using a Thermoelectric Device and Heat Exchanger Arrangement
Ashish Sinha,Yogendra Joshi +1 more
TL;DR: In this paper, the authors investigated the use of thermoelectric (TE) devices for thermal management of downhole electronics, where a finned copper rod in contact with hot side of TE device was used to reject the heat out to the ambient.
Potential and problems of high-temparature electronics and CMOS integrated circuits (25-250℃)-an overview
TL;DR: A brief overview of high-temperature integrated circuit technologies is presented in this article, where the relative merits of several semiconductor materials, technologies, devices and digital and analog circuits are highlighted.
Journal ArticleDOI
Potential and problems of high-temperature electronics and CMOS integrated circuits (25–250°C) - an overview
TL;DR: A brief overview of high-temperature integrated circuit technologies is presented in this article, where the relative merits of several semiconductor materials, technologies, devices and digital and analog circuits are highlighted.
References
More filters
Journal ArticleDOI
Electromigration—A brief survey and some recent results
TL;DR: In this article, it is shown that positive gradients, in terms of electron flow, of temperature, current density, or ion diffusion coefficient foreshorten conductor life because they present regions where vacancies condense to form voids.
Journal ArticleDOI
The reliability of semiconductor devices in the bell system
D.S. Peck,C.H. Zierdt +1 more
TL;DR: The history of reliability of semiconductor devices in the Bell System is a story of sequential application of reliability-enhancing processing principles, which are applied in the absence of completely knowledgeable design and testing control as discussed by the authors.
Journal ArticleDOI
Performance of Digital Integrated Circuit Technologies at Very High Temperatures
TL;DR: In this article, the performance and reliability of digital bipolar and complementary metal-oxide-semiconductor (CMOS) integrated circuits over the 25-340°C range are reported.
Journal ArticleDOI
Stability of lateral pnp transistors during accelerated aging
TL;DR: In this paper, it was concluded that the degradation can be related to a negative surface charge in the base region of the transistor, which has design and process implications for potential improvement of bipolar device reliability in applications that call for high voltages and low epitaxial doping concentration.