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Journal ArticleDOI

A CMOS Imager With Column-Level ADC Using Dynamic Column Fixed-Pattern Noise Reduction

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TLDR
In this paper, a column-level fixed-pattern noise reduction technique called dynamic column switching (DCS) is proposed to reduce the perceptual effects of nonuniformities introduced by column-wise circuit elements.
Abstract
This paper presents a CMOS imager with column-level ADC that uses a dynamic column fixed-pattern noise (FPN) reduction technique. This technique, called dynamic column switching (DCS), strongly reduces the perceptual effects of nonuniformities introduced by the column-level ADC or any other column-wise circuit element. This relaxes the uniformity requirements on the column-level ADC circuitry, which can significantly decrease power consumption and chip area. The proposed DCS technique requires only five transistors per column and minimal digital overhead at the chip level. A prototype was realized in a 0.18 mum CMOS process. The implemented column-level ADC uses a single-slope architecture and features a low-power column circuit design. In the measured images, the application of dynamic column switching make a column FPN of plusmn0.67% of full scale nearly invisible to the human eye

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Citations
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Journal ArticleDOI

Digitally Calibrated 768-kS/s 10-b Minimum-Size SAR ADC Array With Dithering

TL;DR: A novel digital calibration method is developed for SAR ADC based on dithering so that very small capacitors can be used in the SAR ADC due to the relaxed matching requirement and this design is the most area-efficient design.
Journal ArticleDOI

Localization-based super-resolution microscopy with an sCMOS camera Part II: Experimental methodology for comparing sCMOS with EMCCD cameras

TL;DR: It is found that a newly launched sCMOS camera can present superior imaging performance than a popular Electron Multiplying Charge Coupled Device (EMCCD) camera in a signal range more than enough for typical localization-based super-resolution microscopy.
Patent

Apparatus and method for improving dynamic range and linearity of CMOS image sensor

TL;DR: In this article, a circuit and related method for improving the dynamic range and the linearity characteristic of a CMOS image sensor is described, where a current sampler, a comparator, and a 1-bit memory are incorporated in each pixel circuit.
Journal ArticleDOI

A 1500 fps Highly Sensitive 256 $\,\times\,$ 256 CMOS Imaging Sensor With In-Pixel Calibration

TL;DR: A new capacitive transimpedance amplifier (CTIA) pixel with a tiny metal-oxide-metal capacitor is designed with high sensitivity and low noise for high-speed CIS, and the sensitivity improves dramatically.

Noise in sub-micron CMOS image sensors

X. Wang
TL;DR: In this article, the authors analyze dominate noise sources in CMOS imagers and improve the image quality by reducing the noise generated in the CMOS image sensor pixels, which is called dominant noise reduction.
References
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Journal ArticleDOI

CMOS image sensors

TL;DR: This article provides a basic introduction to CMOS image-sensor technology, design and performance limits and presents recent developments and future research directions enabled by pixel-level processing, which promise to further improveCMOS image sensor performance and broaden their applicability beyond current markets.
Journal ArticleDOI

A 500-MSample/s, 6-bit Nyquist-rate ADC for disk-drive read-channel applications

TL;DR: A 500MSam- ple/s 6-Bit ADC and its embedded implementation inside a disk drive read channel, using a 0.35µm CMOS single-poly, triple-metal process, achieves better than 5 effective number of bits (ENOB) for input frequencies up to Nyquist frequency and sampling frequencies fsup to 400MHz.
Proceedings ArticleDOI

A 60 mW 10 b CMOS image sensor with column-to-column FPN reduction

TL;DR: In this paper, a 60 mW 10b 660(H)/spl times/490(v) pixel digital CMOS image sensor with column-to-column FPN reduction introduces the double inverting amplifier with double clamp circuit.
Proceedings ArticleDOI

A single-chip 306/spl times/244-pixel CMOS NTSC video camera

TL;DR: A technological alternative to CCD in the form of cameras using sensors built from standard CMOS processes has appeared, and a further milestone is reported, which can be partitioned into analog and digital sections.
Proceedings ArticleDOI

An integrated 800/spl times/600 CMOS imaging system

TL;DR: In this article, a single chip digital CMOS imaging system with SVGA pixel array, linear bank of 800 parallel 8 b ADCs, 3.2 kB DRAM buffer, digital double sampling (DDS) circuitry and digital control is presented.
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