Journal ArticleDOI
A detailed Raman study of porous silicon
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TLDR
The porosity of the samples varied between 36% and 65% as mentioned in this paper and the presence of nanocrystals in the porous film was clearly observed by an asymmetric broadening of the optical silicon phonon in the Raman spectra.About:
This article is published in Thin Solid Films.The article was published on 1992-12-10. It has received 92 citations till now. The article focuses on the topics: Raman spectroscopy & Porous silicon.read more
Citations
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The structural and luminescence properties of porous silicon
TL;DR: A large amount of work world wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si as mentioned in this paper, and the key importance of crystalline Si nanostructures in determining the behaviour of porous si is highlighted.
Journal ArticleDOI
Applicability of Raman scattering for the characterization of nanocrystalline silicon
TL;DR: In this article, it was shown that Raman scattering alone cannot provide unambiguous information regarding the size, distribution and crystalline fraction of nc-/a-Si films unless additional data regarding the structure of the films are obtained by other techniques.
Journal ArticleDOI
Measurement of porous silicon thermal conductivity by micro-Raman scattering
TL;DR: In this paper, a noncontact and non-destructive method to measure thermal conductivity in layered materials using micro-Raman scattering was presented, which was successfully applied to monocrystalline silicon whose thermal conductivities were found to be 63 W/m
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Application of nanostructured porous silicon in the field of optics. A review
TL;DR: In this paper, the authors review the applications of nanostructured porous silicon that exploit its unique optical properties, as in the case of light emitting devices, filtered photodetectors, optical sensors, and others.
Journal Article
The one phonon raman spectrum in microcrystalline silicon
H. Richter,Z. P. Wang,Lothar Ley +2 more
TL;DR: In this paper, a relaxation in the q-vector selection rule for the excitation of the Raman active optical phonons was proposed to increase the red shift and broadening of the signal from microcrystalline silicon films.
References
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Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Journal ArticleDOI
The one phonon Raman spectrum in microcrystalline silicon
H. Richter,Z. P. Wang,Lothar Ley +2 more
TL;DR: In this paper, a relaxation in the q-vector selection rule for the excitation of the Raman active optical phonons was proposed to increase the red shift and broadening of the signal from microcrystalline silicon films.
Journal ArticleDOI
The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors
TL;DR: In this article, the effect of the exact shape of the microcrystal and the relationship between the width, shift and asymmetry of the Raman line is calculated and is in good agreement with available experimental data.
Journal ArticleDOI
Porous silicon formation: A quantum wire effect
Volker Lehmann,Ulrich Gösele +1 more
TL;DR: In this article, it was shown that a two-dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band gap energy but also may also explain the dissolution mechanism that leads to porous silicon formation.
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Anharmonic effects in light scattering due to optical phonons in silicon
TL;DR: In this paper, light scattering of the linewidth and frequency shift of the optical phonon in silicon over the temperature range of 5-1400 K are presented. But they do not consider the four-phonon anharmonic processes.