Journal ArticleDOI
A G-Band High Power Frequency Doubler in Transferred-Substrate InP HBT Technology
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TLDR
In this article, a G-band balanced frequency doubler with high output power, realized using a 800 nm transferred-substrate InP-HBT process, is presented.Abstract:
This letter presents a G-band balanced frequency doubler with high output power, realized using a 800 nm transferred-substrate InP-HBT process. The doubler delivers $5\ {\rm dBm} \pm 3$ dBm in the range 140–220 GHz. The dc consumption is only 41 mW. To the knowledge of the authors, this is the highest output power for a wideband transistor based frequency doubler in the 140–220 GHz frequency range published so far. The results show the ability to implement a high output power G-band source in transferred-substrate InP HBT technology.read more
Citations
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Journal ArticleDOI
A 10 dBm Output Power D-Band Power Source With 5 dB Conversion Gain in BiCMOS 55nm
Alice Bossuet,Thomas Quemerais,Christophe Gaquiere,Estelle Lauga-Larroze,Jean-Michel Fournier,Sylvie Lepilliet,Daniel Gloria +6 more
TL;DR: In this article, a D-band power source implemented in the STMicroelectronics BiCMOS 55 nm technology and dedicated to on wafer characterization in millimeter-wave band frequency is presented.
Journal ArticleDOI
Fast Radix-32 Approximate DFTs for 1024-Beam Digital RF Beamforming
Arjuna Madanayake,Renato J. Cintra,Najath Akram,Viduneth Ariyarathna,Soumyajit Mandal,Vitor A. Coutinho,Fábio M. Bayer,Diego F. G. Coelho,Theodore S. Rappaport +8 more
TL;DR: This paper anticipates the need for massively large adaptive arrays for future 5G and 6G systems and proposes three new hybrid DFT 1024-point DFT approximations and their respective fast algorithms, which have significantly reduced circuit complexity and power consumption compared to traditional FFT approaches.
Proceedings ArticleDOI
2.37-dBm-output 288–310 GHz frequency multiplier in 40 nm CMOS
TL;DR: A proposed system for input power / phase control of the power combiner enhances the output power of the frequency multiplier to 2.37 dBm at 300 GHz, and a frequency multiplier fabricated with 40 nm CMOS technology is introduced.
Proceedings Article
A Compact Broadband Marchand Balun for Millimeter-wave and Sub-THz Applications
TL;DR: In this article, a folded-type Marchand balun with low phase and magnitude imbalance is proposed for millimeter-wave W-band operation at 40 GHz, where the core area of the balun is 0.35 × 0.16 mm2.
References
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Journal ArticleDOI
Active 220- and 325-GHz Frequency Multiplier Chains in an SiGe HBT Technology
TL;DR: In this article, a 325 GHz ×18 frequency multiplier chain implemented in a fτ/fmax = 250 GHz/380 GHz evaluation SiGe heterojunction bipolar transistor technology is presented.
Journal ArticleDOI
$W$ -Band Amplifiers With 6-dB Noise Figure and Milliwatt-Level 170–200-GHz Doublers in 45-nm CMOS
TL;DR: In this article, the authors present low-noise -band amplifiers and milliwatt-level 170-200 GHz output doublers in 45-nm semiconductor-on-insulator (SOI) CMOS technology.
Proceedings ArticleDOI
A 200-245 GHz Balanced Frequency Doubler with Peak Output Power of +2 dBm
Hsin-Chang Lin,Gabriel M. Rebeiz +1 more
TL;DR: In this article, the authors presented a wideband 90 nm SiGe BiCMOS frequency multiplier at 200-245 GHz with a peak power of +2 dBm at 224-228 GHz and a conversion gain of -15 dBm.
Proceedings ArticleDOI
An ultra-wideband D-Band signal source chip using a fundamental VCO with frequency doubler in a SiGe bipolar technology
TL;DR: In this article, an ultra-wideband signal source chip for the D-band in a SiGe:C bipolar production technology with an T of 170 GHz and a max of 250 GHz was presented.
Proceedings ArticleDOI
A 135–160 GHz balanced frequency doubler in 45 nm CMOS with 3.5 dBm peak power
Hsin-Chang Lin,Gabriel M. Rebeiz +1 more
TL;DR: These are the best results achieved for a D-band doubler in SiGe or CMOS, and shows that advanced CMOS technology can be used to generate wideband power above 100 GHz.