Journal ArticleDOI
A Low Loss High Isolation DC-60 GHz SPDT Traveling-Wave Switch With a Body Bias Technique in 90 nm CMOS Process
Hong-Yeh Chang,Ching-Yan Chan +1 more
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TLDR
In this paper, a low loss high isolation broadband single-port double-throw (SPDT) traveling-wave switch using 90 nm CMOS technology is presented, where a body bias technique is utilized to enhance the circuit performance.Abstract:
In this letter, a low loss high isolation broadband single-port double-throw (SPDT) traveling-wave switch using 90 nm CMOS technology is presented. A body bias technique is utilized to enhance the circuit performance of the switch, especially for the operation frequency above 30 GHz. The parasitic capacitance between the drain and source of the NMOS transistor can be further reduced using the negative body bias technique. Moreover, the insertion loss, the input 1 dB compression point (P1 dB)> and the third-order intermodulation (IMD3) of the switch are all improved. With the technique, the switch demonstrates an insertion loss of 3 dB and an isolation of better than 48 dB from dc to 60 GHz. The chip size of the proposed switch is 0.68 × 0.87 mm2 with a core area of only 0.32 × 0.21 mm2.read more
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Journal ArticleDOI
Analysis and Design of 60-GHz SPDT Switch in 130-nm CMOS
TL;DR: In this article, a new 60 GHz single-pole-double-throw (SPDT) switch is proposed, which is designed in a 1.2-V 130-nm bulk CMOS and has a small core area of 222 μm × 92 μm.
Journal ArticleDOI
Design and Analysis of the Millimeter-Wave SPDT Switch for TDD Applications
Chul Woo Byeon,Chul Soon Park +1 more
TL;DR: In this article, a low-loss and high Tx-to-Rx isolation single-pole double-throw (SPDT) millimeter-wave switch for true time delay applications is presented.
Journal ArticleDOI
A Miniaturized Millimeter-Wave Standing-Wave Filtering Switch With High P1dB
TL;DR: In this article, the design of a silicon-based transmit/receive (T/R) switch for microwave and millimeter-wave frequencies is discussed, and techniques for minimizing switch size and loss while increasing linearity are discussed.
Journal ArticleDOI
Ultra-Wideband Low-Loss Switch Design in High-Resistivity Trap-Rich SOI With Enhanced Channel Mobility
Bo Yu,Kaixue Ma,Fanyi Meng,Kiat Seng Yeo,Parthasarathy Shyam,Shaoqiang Zhang,Purakh Raj Verma +6 more
TL;DR: In this paper, the authors investigated the effect of stress memorization technique (SMT) on ultra-wideband RF switch performance and found that channel mobility of switch transistor is improved by SMT and thus switch performance can be further improved.
Proceedings ArticleDOI
Low-loss and Small-size 28 GHz CMOS SPDT Switches using Switched Inductor
Wonho Lee,Songcheol Hong +1 more
TL;DR: In this paper, a single-pole double-throw (SPDT) switch using a switched inductor is presented, which is composed of a single inductor and two inductor switches which reconfigure the inductor between two output ports.
References
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120-GHz-band millimeter-wave photonic wireless link for 10-Gb/s data transmission
Akihiko Hirata,Toshihiko Kosugi,Hiroyuki Takahashi,R. Yamaguchi,Nakajima Fumito,Tomofumi Furuta,Hiroshi Ito,H. Sugahara,Yasuhiro Sato,Tadao Nagatsuma +9 more
TL;DR: In this article, a 120-GHz-band wireless link that uses millimeter-wave photonic techniques was developed, which achieved error-free transmission of OC-192 and 10-GbE signals over a distance of more than 200 m with a received power of below -30 dBm.
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CMOS T/R Switch Design: Towards Ultra-Wideband and Higher Frequency
Qiang Li,Yue Ping Zhang +1 more
TL;DR: The analysis shows that a series-only architecture using the customized transistor layout achieves better insertion loss and reasonable isolation, and a double-well body-floating technique is proposed and its effects are discussed.
Journal ArticleDOI
Ultra-Compact High-Linearity High-Power Fully Integrated DC–20-GHz 0.18- $\mu{\hbox {m}}$ CMOS T/R Switch
Y. Jin,Cam Nguyen +1 more
TL;DR: In this paper, a fully integrated ultra-broadband transmit/receive (T/R) switch was developed using nMOS transistors with a deep n-well in a standard 0.18mum CMOS process, and demonstrates unprecedented insertion loss, isolation, power handling, and linearity.
Journal ArticleDOI
DC-40 GHz and 20-40 GHz MMIC SPDT Switches
M.J. Schindler,A.M. Morris +1 more
TL;DR: In this paper, DC to 40 GHz and 20-40 GHz monolithic GaAs SPDT switches have been demonstrated and measured power handling performance and switching speed data are also presented.
Journal ArticleDOI
Millimeter-wave MMIC passive HEMT switches using traveling-wave concept
TL;DR: In this paper, the authors describe the design of millimeter-wave wideband monolithic GaAs passive high electron-mobility transistor (HEMT) switches using the traveling-wave concept.
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