Journal ArticleDOI
A melting model for pulsing‐laser annealing of implanted semiconductors
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TLDR
In this paper, the transition to single crystal of ion-implanted amorphous Si and Ge layers is described in terms of a liquid phase epitaxy occurring during pulsing-laser irradiation.Abstract:
The transition to single crystal of ion‐implanted amorphous Si and Ge layers is described in terms of a liquid‐phase epitaxy occurring during pulsing‐laser irradiation. A standard heat equations including laser light absorption was solved numerically to give the time evolution of temperature and melting as a function of the pulse energy density and its duration. The structure dependence of the absorption coefficient and the temperature dependence of the thermal conductivity were accounted for in the calculations. In this model the transition to single crystal occurs above a well‐defined threshold energy density at which the liquid layer wets the underlying single‐crystal substrate. Experiments were performed in ion‐implanted amorphous layers of thicknesses ranging between 500 and 9000 A. The energy densities of the Q‐switched ruby laser ranged between 0.2 and 3.5 J/cm2; time durations of 20 and 50 ns were used. The experimental data are in good agreement with the calculated values for the amorphous thickness–energy−density threshold. The model deals mainly with plausibility arguments and does not account for processes occuring in the near‐threshold region or below the melting temperature.read more
Citations
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Modification of Metal Surface Layer Properties Using Pulsed Electron Beams
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Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method
TL;DR: In this article, the effect of excimer laser annealing on the optical and structural properties of ZnO thin films are investigated by photoluminescence and field emission scanning electron microscope.
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Electrical trimming of ion-beam-sputtered polysilicon resistors by high current pulses
Soumen Das,S.K. Lahiri +1 more
TL;DR: In this article, a pulse trimming technique for polysilicon resistors was proposed, which is simple and does not cause damage to the adjacent components on a monolithic chip, and the trimming characteristics were simulated using a small-signal resistivity model of Lu et al. (1983).
Journal ArticleDOI
Measurement of Lattice Temperature during Pulsed-Laser Annealing by Time-Dependent Optical Reflectivity
TL;DR: In this article, the Si lattice temperature during pulsed-laser annealing has been measured by an interference method, namely a time-dependent optical reflectivity measurement on SOS.
Journal ArticleDOI
A general approach for getting the commutator representations of the hierarchies of nonlinear evolution equations
Zhijun Qiao,Zhijun Qiao +1 more
TL;DR: In this article, a general approach for generating the commutator representations of the hierarchies of nonlinear evolution equations (NLEEs) is presented, and three concrete examples are given.
References
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Journal ArticleDOI
Optical Properties of Semiconductors
H. R. Philipp,H. Ehrenreich +1 more
TL;DR: In this article, the real and imaginary parts of the dielectric constant and the function describing the energy loss of fast electrons traversing the materials are deduced from the Kramers-Kronig relations.
Book ChapterDOI
Ion implantation in semiconductors
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
Ion Implantation in Semiconductors
James W. Mayer,József Gyulai +1 more
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.