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Journal ArticleDOI

A nanoscale combing technique for the large-scale assembly of highly aligned nanowires

Jun Yao, +2 more
- 01 May 2013 - 
- Vol. 8, Iss: 5, pp 329-335
TLDR
It is shown that a nanocombing assembly technique, in which nanowires are anchored to defined areas of a surface and then drawn out over chemically distinct regions of the surface, can yield arrays with greater than 98.5% of thenanowires aligned to within ±1° of the combing direction.
Abstract
The controlled assembly of nanowires is a key challenge in the development of a range of bottom-up devices. Recent advances in the post-growth assembly of nanowires and carbon nanotubes have led to alignment ratios of 80-95% for a misalignment angle of ±5° (refs 5, 12, , 14) and allowed various multiwire devices to be fabricated. However, these methods still create a significant number of crossing defects, which restricts the development of device arrays and circuits based on single nanowires/nanotubes. Here, we show that a nanocombing assembly technique, in which nanowires are anchored to defined areas of a surface and then drawn out over chemically distinct regions of the surface, can yield arrays with greater than 98.5% of the nanowires aligned to within ±1° of the combing direction. The arrays have a crossing defect density of ∼0.04 nanowires per µm and efficient end registration at the anchoring/combing interface. With this technique, arrays of single-nanowire devices are tiled over chips and shown to have reproducible electronic properties. We also show that nanocombing can be used for laterally deterministic assembly, to align ultralong (millimetre-scale) nanowires to within ±1° and to assemble suspended and crossed nanowire arrays.

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Citations
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Journal ArticleDOI

General synthesis of complex nanotubes by gradient electrospinning and controlled pyrolysis

TL;DR: A gradient electrospinning and controlled pyrolysis method to synthesize various controllable 1D nanostructures, including mesoporous nanotubes, pea-like nanot tubes and continuous nanowires, is designed.
Journal ArticleDOI

Earth Abundant Fe/Mn-Based Layered Oxide Interconnected Nanowires for Advanced K-Ion Full Batteries.

TL;DR: A novel earth abundant Fe/Mn-based layered oxide interconnected nanowires as a cathode in KIBs for the first time, which exhibits both high capacity and good cycling stability and may open up the investigation of high-performance K-ion intercalated earth abundant layered cathodes and push the development of energy storage systems.
Journal ArticleDOI

Functional graphene nanosheets: The next generation membranes for water desalination

TL;DR: In this article, the authors highlight the structure and preparation of NPG and GO membranes and discuss the recent experiments, computer simulations and theoretical models, addressing the unique mechanical properties, ion selectivity, and possible transport mechanisms through NPG/GO membranes.
Journal ArticleDOI

Large-Area Cross-Aligned Silver Nanowire Electrodes for Flexible, Transparent, and Force-Sensitive Mechanochromic Touch Screens.

TL;DR: The suggested technique provides a robust and powerful platform for the controllable assembly of nanowires beyond the scale of conventional fabrication techniques, which can find diverse applications in multifunctional flexible electronic and optoelectronic devices.
Journal ArticleDOI

A Review of Carbon Nanomaterials' Synthesis via the Chemical Vapor Deposition (CVD) Method.

TL;DR: This review paper summarizes the synthesis of various carbon nanomaterials via the chemical vapor deposition (CVD) method, including fullerenes, carbon nanotubes (CNTs), carbon nanofibers (CNFs), graphene, carbide-derived carbon (CDC), carbon nano-onion (CNO) and MXenes.
References
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Journal ArticleDOI

Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

TL;DR: The assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping are reported, and electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.
Journal ArticleDOI

Directed Assembly of One-Dimensional Nanostructures into Functional Networks

TL;DR: It is shown that nanowires can be assembled into parallel arrays with control of the average separation and, by combining fluidic alignment with surface-patterning techniques, that it is also possible to control periodicity.
Journal ArticleDOI

High Performance Silicon Nanowire Field Effect Transistors

TL;DR: In this article, the influence of source-drain contact thermal annealing and surface passivation on key transistor properties was examined, and it was shown that thermal annaling and passivation of oxide defects using chemical modification can increase the average transconductance from 45 to 800 nS and average mobility from 30 to 560 cm 2 /V
Journal ArticleDOI

Nanoelectronics from the bottom up

TL;DR: This review presents a brief summary of bottom-up and hybrid bottom- up/top-down strategies for nanoelectronics with an emphasis on memories based on the crossbar motif, including experimental demonstrations of key concepts such lithography-independent, chemically coded stochastic demultipluxers.
Journal ArticleDOI

Ge/Si nanowire heterostructures as high-performance field-effect transistors

TL;DR: Comparison of the intrinsic switching delay, τ = CV/I, shows that the performance of Ge/Si NWFETs is comparable to similar length carbon nanotube FETs and substantially exceeds the length-dependent scaling of planar silicon MOSFets.
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