Journal ArticleDOI
A nonvolatile programmable solid electrolyte nanometer switch
Shunichi Kaeriyama,Toshitsugu Sakamoto,Hiroshi Sunamura,Masayuki Mizuno,Hisao Kawaura,Tsuyoshi Hasegawa,Kazuya Terabe,Tomonobu Nakayama,Masakazu Aono +8 more
- Vol. 40, Iss: 1, pp 168-176
TLDR
In this paper, a reconfigurable LSI employing a nonvolatile nanometer-scale switch, called NanoBridge, is proposed, and its basic operations are demonstrated, and operational tests with them have confirmed the switch's potential for use in programmable logic arrays.Abstract:
A reconfigurable LSI employing a nonvolatile nanometer-scale switch, NanoBridge, is proposed, and its basic operations are demonstrated. The switch, composed of solid electrolyte copper sulfide, has a <30-nm contact diameter and <100-/spl Omega/ on-resistance. Because of its small size, it can be used to create extremely dense field-programmable logic arrays. A 4 /spl times/ 4 crossbar switch and a 2-input look-up-table circuit are fabricated with 0.18-/spl mu/m CMOS technology, and operational tests with them have confirmed the switch's potential for use in programmable logic arrays. A 1-kb nonvolatile memory is also presented, and its potential for use as a low-voltage memory device is demonstrated.read more
Citations
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Nanoionics-based resistive switching memories
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
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Memristive devices for computing
TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
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Observation of conducting filament growth in nanoscale resistive memories
TL;DR: It is found that the filament growth can be dominated by cation transport in the dielectric film, and two different growth modes were observed for the first time in materials with different microstructures.
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Electrochemical metallization memories—fundamentals, applications, prospects
TL;DR: This review focuses on electrochemical metallization memory cells (ECM), highlighting their advantages as the next generation memories and the prospects of ECM with regard to further scalability and the ability for multi-bit data storage.
References
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Journal ArticleDOI
Nanometer-scale switches using copper sulfide
Toshitsugu Sakamoto,Hiroshi Sunamura,Hisao Kawaura,Tsuyoshi Hasegawa,Tomonobu Nakayama,Masakazu Aono,Masakazu Aono +6 more
TL;DR: In this article, the authors describe a nanometer-scale switch that uses a copper sulfide film and demonstrate its performance, which is a chalcogenide semiconductor sandwiched between copper and metal electrodes.
Journal ArticleDOI
Architecture of field-programmable gate arrays
TL;DR: A survey of field-programmable gate array (FPGA) architectures and the programming technologies used to customize them is presented and a classification of logic blocks based on their granularity is proposed, and several logic blocks used in commercially available FPGAs are described.
Journal ArticleDOI
Ionic/electronic mixed conductor tip of a scanning tunneling microscope as a metal atom source for nanostructuring
TL;DR: In this paper, a nanoscale line structure on the sample was fabricated by scanning the Ag2S tip with the protrusion under appropriate bias voltages and tunneling currents.