Patent
Advanced roughness metrology
Aviram Tam,Colin David Chase +1 more
Reads0
Chats0
TLDR
In this paper, a non-circular non-linear shape is fitted to the plurality of points on an edge of the feature in the image and a roughness parameter for the feature is computed in response to the respective distances.Abstract:
A method for evaluating a feature, consisting of receiving an image of the feature and determining respective coordinates of a plurality of points on an edge of the feature in the image. A figure having a non-circular non-linear shape is fitted to the plurality of points, and respective distances between the plurality of points and the figure are determined. A roughness parameter for the feature is computed in response to the respective distances. The method finds application in the analysis of critical dimensions (CD) of integrated circuits and, particularly, in the measurement of the edge roughness of their features and components as imaged by means of eg. The electron scanning microscopy (SEM).read more
Citations
More filters
Patent
Method of measuring three-dimensional surface roughness of a structure
TL;DR: In this paper, a focused ion beam is used to mill a succession of cross-sections or "slices" of the feature of interest at preselected intervals over a pre-selected measurement distance.
Patent
Evaluation method of fine pattern feature, its equipment, and method of semiconductor device fabrication
TL;DR: In this paper, the equipment acquires data of edge roughness over a sufficiently long area, integrates a components corresponding to a spatial frequency region being set on a power spectrum by the operator, and displays them on a length measuring SEM.
Patent
Defect classification using topographical attributes
TL;DR: In this paper, a method for classification of semiconductor wafer patterns has been proposed based on topographical features of the location of interest in a 3D map of the area.
Patent
Apparatus and method of measuring roughness and other parameters of a structure
TL;DR: In this article, various methods of determining structural irregularities based on analysis of the residual signals are presented. But these methods do not consider the structural irregularities such as roughness and topographical errors that give rise to light scattered outside of the specularly reflected component of the diffracted light.
Patent
Apparatus for evaluating degradation of pattern features
TL;DR: A measurement tool for evaluating degradation of pattern features in a semiconductor device manufacturing process is described in this article.The measurement tool apparatus detects variations in the patterns from SEM images thereof and extracts pattern edge points along the circumference of each pattern.
References
More filters
Journal ArticleDOI
Surface roughness prediction in the turning of high-strength steel by factorial design of experiments
TL;DR: In this paper, the results reveal that response surface methodology combined with factorial design of experiments is a better alternative to the traditional one-variable at-a-time approach for studying the effects of cutting variables on responses such as surface roughness and tool life.
Journal ArticleDOI
Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors
TL;DR: Patsis et al. as mentioned in this paper analyzed the detected line edges as found from scanning electron microscope (SEM) image analysis using scaling and fractal concepts and showed that the majority of analyzed experimental edges exhibit a self-affine character and thus the suggested parameters for the description of their roughness should be: (1) the sigma value, (2) the correlation length, and (3) the roughness exponent α.
Journal ArticleDOI
Comparison of metrology methods for quantifying the line edge roughness of patterned features
TL;DR: In this paper, the edge roughness of patterned features in resist and silicon is quantified using atomic force microscopes and scanning electron microscopes. And the parameters that limit the edge coarseness measurement and how they compare to the parameters of critical dimension measurement are discussed.
Journal ArticleDOI
Line edge roughness: experimental results related to a two-parameter model
TL;DR: In this article, a two-parameter model based on a first-order autoregressive process was proposed to describe line edge roughness (LER) and the impact of this model on the LER and critical dimension variation description was determined.
Proceedings ArticleDOI
CD-SEM measurement line-edge roughness test patterns for 193 nm lithography
TL;DR: The AMAG group has designed and built a 193 nm reticle that includes structures implementing a number of schemes to intentionally cause line edge roughness of various spatial frequencies and amplitudes as discussed by the authors.