Proceedings ArticleDOI
Advanced SOI substrate manufacturing
Carlos Mazure,George K. Celler,C. Maleville,Ian Cayrefourcq +3 more
- pp 105-111
TLDR
In this article, the lattice mismatch between silicon and SiGe alloys, combined with layer transfer through the Smart Cut/spl trade/ technology, allow forming two types of strained Si -strained Si on SiGe on insulator, known as SGOI, and strained Si directly on the SiGe directly on a sSOI.Abstract:
300 mm SOI wafers with sub-100nm thick active Si layers are currently produced in large quantities and used in advanced microprocessor circuits. To further enhance the performance of the next generation of devices, strained Si layers on insulator are being developed. The lattice mismatch between silicon and SiGe alloys, combined with layer transfer through the Smart Cut/spl trade/ technology allow forming two types of strained Si - strained Si on SiGe on insulator, known as SGOI, and strained Si directly on insulator, known as sSOI. Fabrication methods and wafer characteristics for SOI, SGOI, and sSOI are discussed here.read more
Citations
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References
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Journal ArticleDOI
Silicon on insulator material technology
TL;DR: In this article, a silicon on insulator material technology based on wafer bonding is described, in which a heat treatment induces an in-depth microslicing of one of the two bonded wafers previously implanted with hydrogen.
Journal ArticleDOI
Frontiers of silicon-on-insulator
TL;DR: In this article, the authors discuss methods of forming silicon-on-insulator (SOI) wafers, their physical properties, and the latest improvements in controlling the structure parameters.
Journal ArticleDOI
The generic nature of SmartCut process for thin film transfer
B. Aspar,Hubert Moriceau,E. Jalaguier,C. Lagahe,A. Soubie,Beatrice Biasse,A. M. Papon,Alain Claverie,Jérémie Grisolia,Gérard Benassayag,Fabrice Letertre,O. Rayssac,T. Barge,Christophe Maleville,Bruno Ghyselen +14 more
TL;DR: In this paper, a specific case of thermally-induced splitting is investigated, where the splitting kinetics are controlled by hydrogen diffusion. And the latest results concerning new structures are presented.
Proceedings ArticleDOI
Preparation of novel SiGe-free strained Si on insulator substrates
TL;DR: A novel SiGe-free SSOI substrate technology has been described, which enables the fabrication of well controlled, epitaxially-defined, thin strained Si layers directly on insulator layers.
Book ChapterDOI
Smart Cut®: the technology used forhigh volume SOI wafer production
B. Aspar,A. J. Auberton-Hervé +1 more
TL;DR: The Smart Cut® process is a breakthrough in material engineering, offering new material and structures to the industry where enabling materials are in high demand as mentioned in this paper, and is linked to cavity growth by an Ostwald ripening mechanism and crack propagation.