Journal ArticleDOI
Advantages of metal-insulator-semiconductor structures for silicon solar cells
Martin A. Green,Andrew Blakers +1 more
TLDR
In this article, the concepts emerging from this work which are in the present author's opinion the most useful are identified and suggestions are made as to how this structure can be used to improve the present silicon cell technology.About:
This article is published in Solar Cells.The article was published on 1983-02-01. It has received 62 citations till now. The article focuses on the topics: Hybrid silicon laser & Silicon on insulator.read more
Citations
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Journal ArticleDOI
High-efficiency silicon solar cells
TL;DR: In this article, a combination of high open-circuit voltage due to careful attention paid to the top surface of the cell, high fill factor due to the high open circuit voltage and low parasitic resistance losses, and high short circuit current density due to use of shallow diffusions, a low grid coverage, and an optimized double layer antireflection coating is described.
Journal ArticleDOI
Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
TL;DR: A review of the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications can be found in this article.
Journal ArticleDOI
Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction
TL;DR: A review of the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications can be found in this article.
Journal ArticleDOI
Solar cell efficiency tables (Version 58)
Martin A. Green,Ewan D. Dunlop,Jochen Hohl-Ebinger,Masahiro Yoshita,Nikos Kopidakis,Xiaojing Hao +5 more
Journal ArticleDOI
Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes
Andrew G. Scheuermann,John P. Lawrence,Kyle W. Kemp,T. Ito,T. Ito,Adrian Walsh,Christopher E. D. Chidsey,Paul K. Hurley,Paul C. McIntyre +8 more
TL;DR: A novel observation of photovoltage loss associated with a charge extraction barrier imposed by the protection layer is reported, and design principles for simultaneous optimization of built-in field, interface quality, and hole extraction are formulated to maximize the photvoltage of oxide-protected water-splitting anodes.
References
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Journal ArticleDOI
Auger coefficients for highly doped and highly excited silicon
J. Dziewior,W. Schmid +1 more
TL;DR: In this article, the recombination kinetics in highly doped p− and n−type silicon were investigated at 77, 300, and 400 K through the radiative band-to-band recombination.
Journal ArticleDOI
Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory☆
TL;DR: In this article, minority carrier MIS tunnel diodes are analyzed using a very general formulation of the tunneling processes through the insulator, transport properties in the semiconductor, and surface state effects.
Journal ArticleDOI
Energy gap in Si and Ge: Impurity dependence
TL;DR: In this paper, the energy gap in silicon and germanium is calculated as a function of the concentration of donor impurities, and the results are compared with the available data from optical experiments and devices.
Journal ArticleDOI
655 mV open-circuit voltage, 17.6% efficient silicon MIS solar cells
R. B. Godfrey,Martin A. Green +1 more
TL;DR: In this paper, the authors reported that the active area efficiency of a 3.1-cm2 silicon solar cell was close to the best silicon cell yet produced with 17.6% active-area efficiency (AM1, 28°C).
Journal ArticleDOI
Review of conductor-insulator-semiconductor (CIS) solar cells
TL;DR: The physics and technology of a new class of photovoltaic devices, namely the conductor-insulator-semiconductor (CIS) solar cells, are reviewed in this article.