Journal ArticleDOI
Aluminum films deposited by rf sputtering
TLDR
In this article, the feasibility of depositing aluminum thin films by means of rf sputtering has been investigated, and film characteristics compatible with the requirements of conductive stripes in integrated circuits have been obtained.Abstract:
The feasibility of depositing aluminum thin films by means of rf sputtering has been investigated. Film characteristics compatible with the requirements of conductive stripes in integrated circuits have been obtained. The rate of film deposition has been related to rf power dissipation, argon pressure, geometry, and magnetic field. Film characteristics such as electrical resistivity, stress, grain size, and orientation have been studied and compared to the characteristics of films deposited by means of evaporation. The effects of annealing on some of these characteristics have been determined.read more
Citations
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Journal ArticleDOI
Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
Shoji Ikeda,Jun Hayakawa,Yoshito Ashizawa,Y. M. Lee,Katsuya Miura,Katsuya Miura,H. Hasegawa,Masakiyo Tsunoda,F. Matsukura,Hideo Ohno +9 more
TL;DR: In this article, the authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300K in Ta∕Co20Fe60B20∕MgO∕SiO2 or Co20Fe 60B20 ∕Ta pseudo-spin-valve magnetic tunnel junction junction annealed at 525°C.
Journal ArticleDOI
Intrinsic stress in sputter-deposited thin films
TL;DR: A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process as discussed by the authors, and extensive experimental evidence show a direct link between the particle flux and energy striking the condensing film, which determines the nature and magnitude of the stress.
Journal ArticleDOI
Review of advances in cubic boron nitride film synthesis
TL;DR: A review of recent developments in BN film synthesis and characterization can be found in this paper, where the key experimental parameters controlling cBN film formation and synthesis techniques are discussed and the proposed mechanisms of cBN formation and the observed mechanical and electrical properties of CBN films are analyzed.
Journal ArticleDOI
An intrinsic stress scaling law for polycrystalline thin films prepared by ion beam sputtering
TL;DR: In this article, the intrinsic stresses of Al, Ti, Fe, Ta, Mo, W, Ge, Si, AlN, TiN, and Si3N4 films prepared by ion beam sputtering were investigated at low Td/Tm values.
Book ChapterDOI
Delamination of Compressed Thin Films
Gustavo Gioia,Michael Ortiz +1 more
TL;DR: Ortiz and Gioia as discussed by the authors reviewed some recent developments based on the use of direct methods of the calculus of variations which have proven useful for understanding the mechanics of folding of thin films.
References
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Journal ArticleDOI
Precise lattice constants of germanium, aluminum, gallium arsenide, uranium, sulphur, quartz and sapphire
TL;DR: The lattice constants of germanium, aluminum gallium arsenide, alpha - uranium, orthorhomhic sulfur, natural quartz, and synthetic sapphire were determined to six significant figures by a precision single crystal x-ray method as mentioned in this paper.
Journal ArticleDOI
Gas incorporation into sputtered films.
Harold F. Winters,Eric Kay +1 more
TL;DR: In this article, the concentration of argon in sputtered nickel films has been obtained as a function of the film growth temperature, the discharge pressure, and of the energy (bias voltage) with which the argon ions bombard the growing film.
Journal ArticleDOI
Dielectric Thin Films through rf Sputtering
P. D. Davidse,L. I. Maissel +1 more
TL;DR: In this article, a high-frequency potential was applied to a metal electrode behind the dielectric target, which was used to deposit thin insulating films, achieving deposition rates up to 2000 A/min.
Journal ArticleDOI
Thin Films Deposited by Bias Sputtering
L. I. Maissel,P. M. Schaible +1 more
TL;DR: In this paper, bias sputtering is applied to a film that is being deposited by dc sputtering, resulting in a film of substantially lower resistivity than without bias, leading to selective removal of adsorbed impurities.
Journal ArticleDOI
Determination of Stress in Films on Single Crystalline Silicon Substrates
TL;DR: In this article, a method to determine stress in thin films deposited on single crystalline silicon wafers is described, where the film is treated as an elastic membrane attached to the edges of a thin circular disk.