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Journal ArticleDOI

An autozeroing floating-gate amplifier

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TLDR
In this article, a bandpass floating-gate amplifier with hot-electron injection was developed, and the high-frequency cutoff was controlled electronically, as is done in continuous-time filters.
Abstract
We have developed a bandpass floating-gate amplifier that uses tunneling and pFET hot-electron injection to set its dc operating point adaptively. Because the hot-electron injection is an inherent part of the pFET's behavior, we obtain this adaptation with no additional circuitry. Because the gate currents are small, the circuit exhibits a high-pass characteristic with a cutoff frequency less than 1 Hz. The high-frequency cutoff is controlled electronically, as is done in continuous-time filters. We have derived analytical models that completely characterize the amplifier and that are in good agreement with experimental data for a wide range of operating conditions and input waveforms. This autozeroing floating-gate amplifier demonstrates how to use continuous-time floating-gate adaptation in amplifier design.

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Citations
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Large-scale field-programmable analog arrays for analog signal processing

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Floating Gate Synapses With Spike-Time-Dependent Plasticity

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References
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Book

Analysis and Design of Analog Integrated Circuits

TL;DR: In this article, the authors combine bipolar, CMOS and BiCMOS analog integrated circuits into a unified treatment that stresses their commonalities and highlights their differences, and provide valuable insights into the relative strengths and weaknesses of these important technologies.
Book

Introduction to VLSI systems

Book

Analog VLSI and Neural Systems

TL;DR: This chapter discusses a simple circuit that can generate a sinusoidal response and calls this circuit the second-order section, which can be used to generate any response that can be represented by two poles in the complex plane, where the two poles have both real and imaginary parts.
Journal ArticleDOI

Hot-electron-induced MOSFET degradation—Model, monitor, and improvement

TL;DR: In this paper, a physical model involving the breaking of the ≡ Si s H bonds was proposed to explain the observed time dependence of MOSFET degradation and the observed channel field.
ReportDOI

Winner-Take-All Networks of O(N) Complexity

TL;DR: A series of compact CMOS integrated circuits that realize the winner-take-all function using only O(n) of interconnect and a circuit that computes local nonlinear inhibition is modified.
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This autozeroing floating-gate amplifier demonstrates how to use continuous-time floating-gate adaptation in amplifier design.