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An Efficient Ultra-Low-Power and Superior Performance Design of Ternary Half Adder Using CNFET and Gate-Overlap TFET Devices

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TLDR
The new approach simplifies the design and reduces the required transistor count & interconnects, thereby reducing the delays and power consumption, and enables a 52% reduction in transistor count compared to the conventional CMOS designs available in the literature.
Abstract
This paper presents a novel ultra-low power yet high-performance device and circuit design paradigm for implementing ternary logic based circuits using Gate-Overlap Tunnel FETs (GOTFETs) and Carbon Nanotube FETs (CNFETs). One of the distinguishing novelty reported in this work is the introduction of an innovative GOTFET device, which exhibits more than double the on-currents $I_{on}$ and less than 1/10th the off-currents $I_{off}$ of equivalent, equally-sized mosfet s at the same technology node. Most of the ternary logic designs reported earlier in the literature encode ternary bits into binary for combinational functionality and then use an Encoder to get back ternary output. Unlike the earlier designs, this paper presents a novel and significantly more efficient approach of directly designing ternary logical functions with Low $V_{t}$ Transistors (LVT) and High $V_{t}$ Transistors (HVT) using CNFET and GOTFET technologies. The new approach simplifies the design and reduces the required transistor count & interconnects, thereby reducing the delays and power consumption. The proposed Ternary Half Adder (THA) circuit, designed using CMOS, enables a 52% reduction in transistor count compared to the conventional CMOS designs available in the literature. The THA implemented with CNFET exhibits 27 ps (87% lower delay than similar CMOS design and consumes 2.4  $\mu$ W power (11% lower than CMOS). On the other hand, CGOT THA exhibits 101 ps (51% lower delay than similar CMOS design) and consumes merely 1.26  $\mu$ W power (53% lower than CMOS, in ultra-low power regime). The overall decrease in the Power Delay Products (PDPs) are 88% and 77%, respectively, in the proposed CNFET and CGOT THA circuits compared to the CMOS THA.

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Citations
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Carbon Nanotubes for High-Performance Electronics-Progress and Prospect : The prospect, for nanotube field effect transistors that can compete with silicon technology, is extremely promising but critical tasks still lie ahead

TL;DR: Carbon nanotubes offer intrinsic advantages for high-performance logic device applications as discussed by the authors, while the intrinsic transport properties of the nanotube ensure at the same time high on-currents.
Journal ArticleDOI

A Review on Low Power VLSI Design Models in Various Circuits

TL;DR: The paper gives an overview about the recent methodologies that have been developed for the performance improvement of V LSI design and it shows the future directions of the areas that are to be concentrated on VLSI circuit design.
Journal ArticleDOI

Comprehensive Survey of Ternary Full Adders: Statistics, Corrections, and Assessments

TL;DR: In this paper , the authors present a survey of ternary full adders (TFAs) in their simplest form, where the voltage of the output carry is either 0V or VDD.
References
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A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region

TL;DR: In this paper, a circuit-compatible compact model for the intrinsic channel region of the MOSFET-like single-walled carbon-nanotube field effect transistors (CNFETs) is presented.
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