Proceedings ArticleDOI
Analysis of a planar silicon opto-electronic modulator based on the waveguide-vanishing effect
TLDR
In this paper, the authors present the thermo-electro-optical analysis of an integrated waveguide-vanishing-based optical modulator based on free-carrier dispersion effect, realizable on standard SOI wafer.Abstract:
Silicon is the most diffused material for microelectronic industry and, in recent times, it is becoming more and more
widespread in integrated optic and optoelectronic fields. We present the thermo-electro-optical analysis of an integrated
waveguide-vanishing-based optical modulator based on free-carrier dispersion effect, realizable on standard SOI wafer.
The optical behavior is based on the vanishing of the lateral confinement in the rib region, and consequent cut-off of the
propagating mode. Results show that an optical modulation depth close to 100% can be reached with a bandwidth of
about 154 MHz. Smart electrical driving, that is an injection overdrive of a few volts for a very short time, allows to
reach total ON-OFF switching time of about 860 ps. For that bias scheme the fall transient is then limiting the whole
dynamic and the resulting bit rate in a pure digital modulation scheme is about 1.2 Gb/s.read more
Citations
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Proceedings ArticleDOI
An analysis of silicon waveguide phase modulation efficiency based on carrier depletion effect
TL;DR: In this paper, the authors highlight the study of carrier depletion effect on silicon waveguide with p-i-n diode and NPN structure and predict the device performance by using 2D Silvaco CAD software under different applied voltages.
Proceedings ArticleDOI
On the modulation phase efficiency of a silicon p-i-n diode optical modulator
TL;DR: In this article, the authors highlight the study of carrier injection effect on silicon waveguide with p-i-n diode structure integrated on Silicon-on-Insulator (SOI).
Proceedings ArticleDOI
Free carrier absorption loss of p-i-n silicon-on-insulator (SOI) phase modulator
TL;DR: In this article, a change in the refractive index/absorption can be achieved by injection or depletion of both electron and holes into the intrinsic region of a silicon p-i-n diode.
Proceedings ArticleDOI
Various doping concentration effect on silicon-on-insulator (SOI) phase modulator
TL;DR: In this article, the effect of doping concentration on the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55µm was investigated using CAD software under DC operation.
Proceedings ArticleDOI
Phase modulator based on silicon-on-insulator (SOI) rib waveguide
TL;DR: In this paper, the phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide by using the p-i-n diode structure.
References
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Journal ArticleDOI
Large single-mode rib waveguides in GeSi-Si and Si-on-SiO/sub 2/
TL;DR: In this article, mode-matching and beam-propagation methods are used to analyze single-mode operation of optical GeSi-Si and Si-SiO/sub 2/ semiconductor rib waveguides.
Journal ArticleDOI
Low-loss planar optical waveguides fabricated in SIMOX material
TL;DR: In this paper, the effect of the thickness of the buried oxide layer on propagation loss has been studied, and the lowest loss was observed for a buried oxide thickness of 0.4 mu m, at a measurement wavelength of 1.523 mu m.
Journal ArticleDOI
Thermo-electro-optical analysis of an integrated waveguide-vanishing-based optical modulator
TL;DR: In this paper, the authors present the thermo-electro-optical analysis of an integrated waveguide-vanishing-based optical modulator based on the free carrier dispersion effect.