Journal ArticleDOI
Band alignment of atomic layer deposited (ZrO2)x(SiO2)1−x gate dielectrics on Si (100)
Sung Heo,Dahlang Tahir,Jae Gwan Chung,Jae-Cheol Lee,Kihong Kim,Junho Lee,Hyung-Ik Lee,Gyeong Su Park,Suhk Kun Oh,Hee Jae Kang,Pyungho Choi,Byoungdeog Choi +11 more
TLDR
The band alignment of atomic layer deposited (HfZrO4)1−x(SiO2)x (x = 0, 0.10, 0., 0.15, and 0.20) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectrographs as discussed by the authors.Abstract:
The band alignment of atomic layer deposited (HfZrO4)1−x(SiO2)x (x = 0, 0.10, 0.15, and 0.20) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence band offset, and conduction band offset values for HfZrO4 silicate increased from 5.4 eV to 5.8 eV, from 2.5 eV to 2.75 eV, and from 1.78 eV to 1.93 eV, respectively, as the mole fraction (x) of SiO2 increased from 0.1 to 0.2. This increase in the conduction band and valence band offsets, as a function of increasing SiO2 mole fraction, decreased the gate leakage current density. As a result, HfZrO4 silicate thin films were found to be better for advanced gate stack applications because they had adequate band gaps to ensure sufficient conduction band offsets and valence band offsets to Si.read more
Citations
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Journal ArticleDOI
Reflection electron energy loss spectroscopy for ultrathin gate oxide materials
Hye Chung Shin,Dahlang Tahir,Soonjoo Seo,Yus Rama Denny,Suhk Kun Oh,Hee Jae Kang,Sung Heo,Jae Gwan Chung,Jae Cheol Lee,Sven Tougaard +9 more
TL;DR: It is demonstrated that the quantitative analysis of reflection electron energy loss spectroscopy spectra obtained from HfZrO4 thin films provides a straightforward way to determine the optical properties and the inelastic mean free path of ultrathin gate oxide materials.
Journal ArticleDOI
Quantitative analysis of diffraction and infra-red spectra of composite cement/BaSO4/Fe3O4 for determining correlation between attenuation coefficient, structural and optical properties
TL;DR: In this article, the structural and optical properties of composite cement/BaSO4/Fe3O4 for various amount of BaSO4, the X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy have been used to investigate the correlation between their structural properties.
Journal ArticleDOI
Electronic properties of composite iron (II, III) oxide (Fe3O4) carbonaceous absorber materials by electron spectroscopy
TL;DR: In this paper, X-ray photoelectron spectroscopy (XPS), reflection electron energy loss spectroglobalization (REELS), and Fourier Transform Infrared Spectrograph (FTIR) spectrograms were used to obtain the electronic properties of composite Fe3O4 carbonaceous absorber materials.
Journal ArticleDOI
Composition dependence of dielectric and optical properties of Hf-Zr-silicate thin films grown on Si(100) by atomic layer deposition
TL;DR: In this article, the authors used the reflection electron energy loss spectroscopy (REELS) spectra of gate dielectric thin films, grown on Si(100) by the atomic layer deposition method.
Journal ArticleDOI
Dielectric and optical properties of Zr silicate thin films grown on Si(100) by atomic layer deposition
Dahlang Tahir,Eun Kyoung Lee,Suhk Kun Oh,Hee Jae Kang,Sung Heo,Jae Gwan Chung,Jae-Cheol Lee,Sven Tougaard +7 more
TL;DR: In this paper, the dielectric and optical properties of ZrO2 and SiO2 thin films, grown on Si(100) by the atomic layer deposition method, were studied by means of reflection electron energy loss spectroscopy (REELS).
References
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First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide
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