Journal ArticleDOI
Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
David A. B. Miller,Daniel S. Chemla,T. C. Damen,Arthur C. Gossard,W. Wiegmann,Thomas H. Wood,Charles A. Burrus +6 more
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In this article, the authors present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers.Abstract:
We present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers. In contrast to the Stark effect on atoms or on excitons in bulk semiconductors, the exciton resonances remain resolved even for shifts much larger than the zero-field binding energy and fields g 50 times the classical ionization field. The model explains these results as a consequence of the quantum confinement of carriers.read more
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Spectroscopic method of strain analysis in semiconductor quantum-well devices
Mark L. Biermann,Steven Duran,Kelsey Peterson,A. Gerhardt,Jens W. Tomm,Artem Bercha,Witold Trzeciakowski +6 more
TL;DR: In this paper, a generalized, spectroscopic-based technique for analyzing the strain condition within devices based on quantum wells was proposed, which couples experimental data describing interband transition energies within strained, quantum well devices with a rigorous theoretical description of the quantum-well bandstructure.
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Anticorrelation between the Evolution of Molecular Dipole Moments and Induced Work Function Modifications.
David Egger,Egbert Zojer +1 more
TL;DR: Using atomistic simulations, it is shown that large dipoles imply electronic localization and level shifts that drive the interface into a thermodynamically unstable situation and trigger compensating charge reorganizations working against the molecular dipoles.
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External Electric Field Modulated Electronic and Structural Properties of 〈111〉 Si Nanowires
TL;DR: In this paper, the effects of external electric field F on band gap of silicon nanowires in a diameter range of D = 0.45−1.79 nm are quantitatively calculated using density functional theory.
Journal ArticleDOI
Correlated terahertz acoustic and electromagnetic emission in dynamically screened InGaN/GaN quantum wells
TL;DR: In this paper, the authors investigate acoustic and electromagnetic emission from optically excited strained piezoelectric In0.2Ga0.8N/GaN multiple quantum wells (MQWs), using optical pump-probe spectroscopy, time-resolved Brillouin scattering, and THz emission spectrum analysis.
Journal ArticleDOI
Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects
Papichaya Chaisakul,Vladyslav Vakarin,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Laurent Vivien,Delphine Marris-Morini +6 more
TL;DR: In this paper, the current state of knowledge and progress of developing optical modulators, photodetectors, and emitters based on Ge/SiGe quantum wells are discussed.