Journal ArticleDOI
Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
David A. B. Miller,Daniel S. Chemla,T. C. Damen,Arthur C. Gossard,W. Wiegmann,Thomas H. Wood,Charles A. Burrus +6 more
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In this article, the authors present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers.Abstract:
We present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers. In contrast to the Stark effect on atoms or on excitons in bulk semiconductors, the exciton resonances remain resolved even for shifts much larger than the zero-field binding energy and fields g 50 times the classical ionization field. The model explains these results as a consequence of the quantum confinement of carriers.read more
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The effect of polarity on MOCVD growth of thick InGaN
TL;DR: In this article, the effect of polarity on the structural quality, surface morphology and optical properties of metalorganic chemical vapor deposition grown InGaN films was investigated and the results demonstrate smooth (0.7 nm RMS) thick N-polar inGaN layers that are free of hexagonal hillocks and V-pits.
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Field-induced lifetime enhancement and ionization of excitons in GaAs/AlGaAs quantum wells
TL;DR: In this paper, a photoluminescence study of GaAs/AlGaAs quantum wells exposed to electric fields perpendicular to the layers is reported, which is consistent with the model of the Quantum-Confined Stark Effect.
Journal ArticleDOI
The electro-reflectance lineshape for a quantum well: the dependence on angle of incidence and temperature
TL;DR: In this article, the effect of varying both the angle of incidence and the temperature on electro-reflectance spectroscopy (ERS) measurements for a 100AA p-i-n single quantum well structure of GaAs/Ga0.8Al 0.2As was studied.
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Band gaps in InN/GaN superlattices: Nonpolar and polar growth directions
TL;DR: In this paper, the electronic structures of nonpolar short-period InN/GaN superlattices (SLs) grown in the wurtzite a-and m-directions have been calculated and compared to previous calculations for polar SLs (grown in the c-direction).
Journal ArticleDOI
Linear and nonlinear optical absorption coefficient and electronic features of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on barrier widths
TL;DR: In this paper, the effect of the barrier widths on the linear and nonlinear optical absorption coefficient (OAC) and the electronic features of asymmetric triple Ga1-xAlxAs/GaAs (A structure) and Ga 1-xInxAs and GaAs (B structure) quantum wells (QW) was investigated.