Journal ArticleDOI
Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
David A. B. Miller,Daniel S. Chemla,T. C. Damen,Arthur C. Gossard,W. Wiegmann,Thomas H. Wood,Charles A. Burrus +6 more
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TLDR
In this article, the authors present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers.Abstract:
We present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers. In contrast to the Stark effect on atoms or on excitons in bulk semiconductors, the exciton resonances remain resolved even for shifts much larger than the zero-field binding energy and fields g 50 times the classical ionization field. The model explains these results as a consequence of the quantum confinement of carriers.read more
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Journal ArticleDOI
Enhancement of quantum confined Stark effect in a graded gap quantum well
K. Nishi,T. Hiroshima +1 more
TL;DR: In this paper, a graded gap quantum well structure was proposed for the enhancement of the quantum confined Stark effect, where the band gap is linearly changing along the growth direction, and the wave function modifications in this quantum well result in a smaller decrease of the exciton oscillator strength according to the electric field applied.
Journal ArticleDOI
Optical properties of strained wurtzite gallium phosphide nanowires
Johannes Greil,Simone Assali,Yoshitada Isono,A. Belabbes,A. Belabbes,Friedhelm Bechstedt,F O Valega Mackenzie,A. Yu. Silov,Epam Erik Bakkers,Epam Erik Bakkers,Jem Jos Haverkort +10 more
TL;DR: The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material.
Journal ArticleDOI
High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
Sadeka Islam,Vladimir Protasenko,Kevin Lee,Sergei Rouvimov,Jai Verma,Huili,Xing,Debdeep Jena +7 more
TL;DR: In this paper, it was shown that high-quality epitaxial ultrathin binary GaN quantum disks embedded in an AlN matrix can produce efficient optical emission in the 219-235 nm spectral range, far above the bulk bandgap (3.4 eV) of GaN.
Journal ArticleDOI
Stark shifts in GaAs/GaAlAs quantum wells studied by photoluminescence spectroscopy
TL;DR: In this paper, the dependence on the well thickness of the shift of the excitonic recombination in GaAs/GaAlAs quantum wells induced by an external electric field was measured.
Patent
Nitride semiconductor device with reduced polarization fields
TL;DR: In this paper, a method for fabricating a light-emitting semiconductor device including a III-nitride quantum well layer includes selecting a facet orientation of the quantum well layers to control a field strength of a piezoelectric field and/or a field strengths of a spontaneous electric field in the Q-well layer, and growing the Q well layer with the selected facet orientation.