Journal ArticleDOI
Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
David A. B. Miller,Daniel S. Chemla,T. C. Damen,Arthur C. Gossard,W. Wiegmann,Thomas H. Wood,Charles A. Burrus +6 more
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In this article, the authors present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers.Abstract:
We present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers. In contrast to the Stark effect on atoms or on excitons in bulk semiconductors, the exciton resonances remain resolved even for shifts much larger than the zero-field binding energy and fields g 50 times the classical ionization field. The model explains these results as a consequence of the quantum confinement of carriers.read more
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Evolution of Floquet topological quantum states in driven semiconductors
TL;DR: In this article, the evolution of Floquet topological quantum states for electromagnetically driven semiconductor bulk matter has been studied and the direct physical impact of the mathematical precision of the Floquet-Keldysh theory when solving the driven system of a generalized Hubbard model with the framework of dynamical mean field theory in the non-equilibrium.
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Photocurrent response of GaInAs/InP multiple quantum well detectors grown by gas source molecular beam epitaxy
TL;DR: In this article, the properties of mesa and waveguide p−i−n detectors fabricated from multiple quantum well structures grown by gas source molecular beam epitaxy were studied. And the authors showed that mesa detectors showed quantum efficiency of up to 77% at 1.56 μm and a capacitance limited pulse response of 200 ps.
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InGaN multiquantum well structure with a reduced internal electric field and carrier decay process by tunneling
TL;DR: In this article, an InGaN/InGaN multiquantum well (MQW) structure with a reduced internal electric field is grown, and compared with a conventional InGa N/GaN MQW structure, time-integrated and time-resolved photoluminescence (PL) are measured as a function of an external bias voltage.
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Photoluminescence of Diphenylalanine Peptide Nano/Microstructures: From Mechanisms to Applications.
Zhixing Gan,Hao Xu,Hao Xu +2 more
TL;DR: In this review, recent advances in photoluminescence of supramolecular architectures of FF-based peptide and the underlying mechanisms are highlighted and are endeavored to boost future explorations on the PL of the bioinspired FF peptide nano/microstructures.
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Optoelectronics-VLSI system integration Technological challenges
TL;DR: The recent integration of micron-size optoelectronic components such as emitters, photodetectors and spatial light modulators within VLSI electronic chips allows the fabrication of on/off chip data communication rate systems of the order of 10 12 pin-Hz as discussed by the authors.