Journal ArticleDOI
Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
David A. B. Miller,Daniel S. Chemla,T. C. Damen,Arthur C. Gossard,W. Wiegmann,Thomas H. Wood,Charles A. Burrus +6 more
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In this article, the authors present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers.Abstract:
We present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers. In contrast to the Stark effect on atoms or on excitons in bulk semiconductors, the exciton resonances remain resolved even for shifts much larger than the zero-field binding energy and fields g 50 times the classical ionization field. The model explains these results as a consequence of the quantum confinement of carriers.read more
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Journal ArticleDOI
Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes
Jae-Hyun Ryou,Wook Lee,J. Limb,D. Yoo,D. Yoo,Jian Liu,Russell D. Dupuis,Z. H. Wu,Alec M. Fischer,Fernando Ponce +9 more
TL;DR: In this paper, the authors demonstrate the control of the quantum-confined Stark effect in InGaN∕GaN quantum wells (QWs), grown along the [0001] direction as part of the active region of visible light emitting diodes (LEDs).
Journal ArticleDOI
Numerical analysis of the absorption and the refractive index change in arbitrary semiconductor quantum-well structures
TL;DR: In this article, a numerical method for the analysis of the absorption spectrum and the refractive index change due to an external electric field in quantum-well structures is presented, which is applicable to quantum well structures with arbitrary potential profiles made of arbitrary semiconductors, because it is based on the finite-element method in which the general boundary condition for the heterointerface is employed.
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Numerical Investigation on the Carrier Transport Characteristics of AlGaN Deep-UV Light-Emitting Diodes
TL;DR: In this paper, the authors investigated the carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) and showed that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface.
Journal ArticleDOI
Interlayer Trions in the MoS2/WS2 van der Waals Heterostructure.
TL;DR: This work investigates the complete set of interlayer excitations in a MoS2/WS2 heterostructure using a novel ab initio method, which allows for a consistent treatment of both excitons and trions at the same theoretical footing.