Journal ArticleDOI
Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
David A. B. Miller,Daniel S. Chemla,T. C. Damen,Arthur C. Gossard,W. Wiegmann,Thomas H. Wood,Charles A. Burrus +6 more
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In this article, the authors present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers.Abstract:
We present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers. In contrast to the Stark effect on atoms or on excitons in bulk semiconductors, the exciton resonances remain resolved even for shifts much larger than the zero-field binding energy and fields g 50 times the classical ionization field. The model explains these results as a consequence of the quantum confinement of carriers.read more
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Journal ArticleDOI
Real-time 3-D holographic imaging using photorefractive media including multiple-quantum-well devices
Richard Jones,N.P. Barry,S.C.W. Hyde,M. Tziraki,J. C. Dainty,Paul M. W. French,David D. Nolte,K. M. Kwolek,M. R. Melloch +8 more
TL;DR: In this paper, a real-time coherence gated three-dimensional (3D) imaging system, based on photorefractive holography with ultrashort pulses, has been applied to imaging through turbid media with a view to developing biomedical instrumentation.
Patent
Vertical integration of active devices with passive semiconductor waveguides
TL;DR: In this article, a method for monolithic integration of active devices with passive semiconductor waveguides was proposed for use in InP-based planar wavelength division multiplexing components of optical communication systems.
Journal ArticleDOI
Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices
TL;DR: In this paper, the electronic structures of short period mGaN/nGayAl1−yN and mInyGa1-yN/NGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well-and n of barrier-monolayers.
Journal ArticleDOI
High-Efficiency Deep-Ultraviolet Light-Emitting Diodes With Efficient Carrier Confinement and High Light Extraction
TL;DR: In this paper, the capability of carrier confinement and properties of optical polarization in deep-ultraviolet (DUV) light-emitting diodes (LEDs) are analyzed in detail.
Journal ArticleDOI
Resolving the temporal evolution of line broadening in single quantum emitters.
Christian Schimpf,Marcus Reindl,Petr Klenovský,Thomas Fromherz,Saimon Filipe Covre da Silva,Julian Hofer,Christian Schneider,Sven Höfling,Rinaldo Trotta,Armando Rastelli +9 more
TL;DR: In this article, photon correlation Fourier spectroscopy (PCFS) was employed to study the temporal evolution of a line broadening in two prominent systems: GaAs and In(Ga)As quantum dots.