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Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

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TLDR
In this article, the authors present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers.
Abstract
We present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers. In contrast to the Stark effect on atoms or on excitons in bulk semiconductors, the exciton resonances remain resolved even for shifts much larger than the zero-field binding energy and fields g 50 times the classical ionization field. The model explains these results as a consequence of the quantum confinement of carriers.

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Journal ArticleDOI

Plasmons and magnetoplasmons in semiconductor heterostructures

TL;DR: In this article, the status of the theory and experiment which can contribute to our knowledge of plasmon excitations in synthetic semiconductor heterostructures is surveyed. But, beyond the presentation of the results achieved, there is a need to examine carefully the methodologies employed to obtain such results.
Journal ArticleDOI

Electrical control of optical properties of monolayer MoS2

TL;DR: In this paper, electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS2) configured in field effect transistor geometry was investigated.
Journal ArticleDOI

Electrically controlled light scattering with single metal nanoparticles

TL;DR: In this paper, a concept to electrically control the scattering of light is introduced, which is to embed noble metal nanoparticles in an electro-optical material such as a liquid crystal in order to induce a spectral shift of the particle plasmon resonance by applying an electric field.
Journal ArticleDOI

Electronic and Excitonic Structures of Inorganic–Organic Perovskite-Type Quantum-Well Crystal (C4H9NH3)2PbBr4

TL;DR: In this article, the binding energy, longitudinal-transverse splitting energy, and exchange energy of 1s excitons have been determined to be 480, 70 and 31 meV, respectively.
Journal ArticleDOI

Non-linear dynamics of semiconductor superlattices

TL;DR: In this article, the authors provide a detailed description of the observed non-linear transport in semiconductor superlattices, including the formation of stationary electric field domains, pinning or propagation of domain walls, switching between stationary domains, self-sustained current oscillations due to the recycling motion of a charge monopole and chaos.
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