Journal ArticleDOI
Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling
J. Maserjian,N. Zamani +1 more
Reads0
Chats0
TLDR
In this paper, the authors show that after tunnel injection of 1017 −5×1018 electrons/cm2, the barrier undergoes significant degradation leading to enhanced tunneling conductance, with reproducible behavior observed among different samples.Abstract:
Thin‐oxide (40–50 A) metal oxide semiconductor (MOS) structures are shown to exhibit, prior to large levels of electron tunnel injection, the near‐ideal behavior predicted for a uniform trapezoidal barrier with thick‐oxide properties. The oscillatory field dependence due to electron‐wave interference at the Si/SiO2 interface indicates an abrupt, one‐monolayer barrier transition (∼2.5 A) consistent with earlier work. After tunnel injection of 1017 –5×1018 electrons/cm2, the barrier undergoes significant degradation leading to enhanced tunneling conductance, with reproducible behavior observed among different samples. This effect is consistent with the generation of positive states in the region of the oxide near the Si/SiO2 interface (<20 A), where the tunneling electrons emerge into the oxide conduction band. Densities of positive‐charge and interface‐state buildup are also observed from capacitance‐voltage (C‐V) measurements and are found to be consistent with the observed tunneling dependence on positiv...read more
Citations
More filters
Journal ArticleDOI
Mechanism for stress-induced leakage currents in thin silicon dioxide films
D. J. DiMaria,Eduard A. Cartier +1 more
TL;DR: In this paper, it was concluded that the generation of neutral electron traps in thin oxides is the dominant cause of leakage currents introduced in the low-field, direct-tunneling regime of thin oxide during high-field stress.
Journal ArticleDOI
Chemical and electronic structure of the SiO2/Si interface
TL;DR: In this article, the chemical structure of the SiO2/Si interface and its relationship to both MOS device processing chemistry and, ultimately, the resultant electrical device properties were investigated.
Journal ArticleDOI
Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling
Wen-Chin Lee,Chenming Hu +1 more
TL;DR: In this paper, a semi-empirical model is proposed to quantify the tunneling currents through ultrathin gate oxides (1-3.6 nm) as a multiplier to a simple analytical model, a correction function is introduced to achieve universal applicability to all different combinations of bias polarities (inversion and accumulation), gate materials (N/sup +/, P/sup+/, Si, SiGe) and tunneling processes.
Book ChapterDOI
Tunneling spectroscopy and inverse photoemission: Image and field states
G. Binnig,K. H. Frank,Harald Fuchs,N. Garcia,B. Reihl,Heinrich Rohrer,F. Salvan,Arthur Robert Williams +7 more
TL;DR: In this article, a simple theoretical model provides a quantitative connection between the tunneling data and both previous and new inverse-photo-emission data, which is used to study image-type surface states.
Journal ArticleDOI
High-field-induced degradation in ultra-thin SiO/sub 2/ films
TL;DR: In this article, the authors proposed that the oxide leakage originates from localized defect-related weak spots where the insulator has experienced significant deterioration from electrical stress, and the leakage conduction mechanism appears to be thermally assisted tunneling through the locally reduced injection barrier.
References
More filters
Journal ArticleDOI
Fowler‐Nordheim Tunneling into Thermally Grown SiO2
M. Lenzlinger,E. H. Snow +1 more
TL;DR: In this article, the relative effective mass in the forbidden energy gap was found to be about 0.4, which is lower by a factor of five to ten than the expected values, probably due to trapping effects.
Journal ArticleDOI
An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
TL;DR: In this article, the M-O-S diode was introduced, and a theory for its operation in the absence of surface states was obtained, and it was shown that surface states with non-zero relaxation times may increase the capacitance of the device, as well as affect the proportion of applied voltage which appears across the silicon.
Journal ArticleDOI
Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents
TL;DR: In this article, a series of experiments designed to characterize the charging effect of thermal SiO2 films with water was conducted. And they found that if water is diffused into a SiO 2 film, water related centers are formed which act like electron traps with capture cross section of approximately 1.5 × 10−17 cm2.
Journal ArticleDOI
High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Si O 2 and the Si-Si O 2 Interface
TL;DR: In this paper, the chemical structure of thin Si${\mathrm{O}}_{2}$ films and Si${O}$-Si interfaces has been investigated using high-resolution x-ray photoelectron spectroscopy.
Related Papers (5)
High-field-induced degradation in ultra-thin SiO/sub 2/ films
Mechanism for stress-induced leakage currents in thin silicon dioxide films
D. J. DiMaria,Eduard A. Cartier +1 more