Proceedings ArticleDOI
Benchmarking of Large-Area GaN-on-Si HFET Power Devices for Highly-Efficient, Fast-Switching Converter Applications
Richard Reiner,Patrick Waltereit,Fouad Benkhelifa,Stefan Müller,M. Wespel,Rudiger Quay,Michael Schlechtweg,Michael Mikulla,Oliver Ambacher +8 more
- pp 1-4
TLDR
In this paper, the development and fabrication of large area AlGaN/GaN-on-Si HFETs for the use in highly efficient fast-switching power converters is reported.Abstract:
This work reports the development and fabrication of large area AlGaN/GaN-on-Si HFETs for the use in highly-efficient fast-switching power converters. High performance is demonstrated by full characterization of static- and dynamic-parameters and a direct comparison to two commercial state-of-the-art silicon power devices. Compared to their silicon counterparts the GaN-device achieves by a factor of 3 lower static area specific on-state resistance RON×A, and by a factor of 3 lower static on-state resistance times gate charge product RON×Q. In switching tests the device achieves a low dynamic dispersion and low switching losses. Furthermore in this work a sophisticated measurement setup for characterization of dynamic parameters is developed and demonstrated. Characterization and test conditions are adapted for the use in fast-switching power converter applications.read more
Citations
More filters
Journal ArticleDOI
Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress
TL;DR: In this paper, the gate degradation was found to be weakly dependent on temperature with an activation energy of 0.1 eV, and the maximum allowed gate operating voltage was estimated using the Weibull statistics.
Journal ArticleDOI
Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices
TL;DR: In this article, a detailed analysis on the assembly and packaging technologies for the state-of-the-art GaN-based high-electron-mobility transistors, which are suitable for high-temperature and high-power applications, is given.
Journal ArticleDOI
Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Richard Reiner,Patrick Waltereit,Beatrix Weiss,Stefan Moench,M. Wespel,Stefan Müller,Rudiger Quay,Oliver Ambacher +7 more
TL;DR: In this article, a high switching transition slew rate is demonstrated by means of a monolithic power circuit with integrated gate driver for the 600 V class and on-state resistance of 53 mΩ.
Journal ArticleDOI
High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique
Hsien-Chin Chiu,Yi-Sheng Chang,Bo-Hong Li,Hsiang-Chun Wang,Hsuan-Ling Kao,Feng-Tso Chien,Chih-Wei Hu,Rong Xuan +7 more
TL;DR: In this article, a normally-off p-GaN gate AlGaN/GaN high-electron-mobility transistor with high ON-state resistance was realized using a self-terminated digital etching technique.
Proceedings ArticleDOI
Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT
Stefan Moench,Marco Salvatore Costa,Alexander Barner,Ingmar Kallfass,Richard Reiner,Beatrix Weiss,Patrick Waltereit,Rudiger Quay,Oliver Ambacher +8 more
Abstract: This work reports on a 600 V GaN-on-Si power transistor with monolithic integrated gate driver. The circuit is based on Schottky-gate depletion-mode technology and fabricated on a 2×3 mm2 chip. The push-pull gate driver stage implements a quasi-normally-off pull-up transistor, fabricated with monolithic integrated series-connected Schottky diodes for positive voltage-level shifting in the source path of a d-mode HEMT. The measured gate-source threshold voltage of the fabricated quasi-normally-off pull-up transistor is +2.7 V as compared to −2.9 V of the normally-on pull-down transistor. Pulsed-IV measurements determine an effective gate driver resistance of around 2 Ω. On-wafer measurements of the power transistor show low off-state leakage-currents up to 600 V blocking voltage with high wafer yield and 150 mΩ on-resistance. Finally, inductive-load switching measurements up to 450 V, 14.3 A show maximum switch node slew-rates during turn-on and turn-off transitions as high as 250 V/ns.
References
More filters
Journal ArticleDOI
Semiconductors for high‐voltage, vertical channel field‐effect transistors
TL;DR: In this paper, the influence of material parameters on the characteristics of vertical channel power field effect transistors is examined, and it is demonstrated that for devices with the same breakdown voltage and device structure, the onresistance is inversely proportional to the third power of the energyband gap and inversely proportion to the mobility.
Proceedings ArticleDOI
Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs
TL;DR: In this paper, the dynamic on-state resistance was analyzed for variations in buffer composition and set into relation to the buffer voltage-blocking strength, and the impact of p-GaN gate normally-off and Schottky-gate normally-on device technologies on the dispersion was studied.
Journal ArticleDOI
AlGaN/GaN epitaxy and technology
Patrick Waltereit,Wolfgang Bronner,Rudiger Quay,Michael Dammann,Rudolf Kiefer,Wilfried Pletschen,Stefan Müller,Rolf Aidam,H. P. Menner,Lutz Kirste,Klaus Köhler,Michael Mikulla,Oliver Ambacher +12 more
TL;DR: In this paper, the authors present an overview on epitaxial growth, processing technology, device performance, and reliability of GaN high electron mobility transistors (HEMTs) manufactured on 3-and 4-in. SiC substrates.
Related Papers (5)
Modelling technique utilizing modified sigmoid functions for describing power transistor device capacitances applied on GaN HEMT and silicon MOSFET
H. L. Yeo,King Jet Tseng +1 more