Journal ArticleDOI
Semiconductors for high‐voltage, vertical channel field‐effect transistors
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TLDR
In this paper, the influence of material parameters on the characteristics of vertical channel power field effect transistors is examined, and it is demonstrated that for devices with the same breakdown voltage and device structure, the onresistance is inversely proportional to the third power of the energyband gap and inversely proportion to the mobility.Abstract:
The influence of material parameters upon the characteristics of vertical channel power field effect transistors is examined. It is demonstrated that for devices with the same breakdown voltage and device structure, the on‐resistance is inversely proportional to the third power of the energyband gap and inversely proportional to the mobility. In addition the frequency response of these devices increases in proportion to the mobility and the energyband gap. Calculated device parameters for III–V semiconductor compounds, as well as their alloys, have been compared to those of a silicondevice with the same breakdown voltage. It is found that devicesfabricated from GaAs,InP, and GaP are expected to have a current handling capability which is a factor of 12.7, 5, and 1.85 better than that of the silicondevice with the same breakdown voltage. In addition, the current handling capability of devicesfabricated from the alloy semiconductors GaAlAs, GaAsP, and InGaP are even superior to those of a GaAsdevice with the same breakdown voltage.read more
Citations
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Journal ArticleDOI
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
TL;DR: In this paper, a single-crystal gallium oxide (Ga2O3) metal-semiconductor field effect transistors (MESFETs) with a gate length of 4 μm and a source-drain spacing of 20 μm is presented.
Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Journal ArticleDOI
Power semiconductor device figure of merit for high-frequency applications
TL;DR: In this paper, the authors derived the Baliga high-frequency figure of merit for power semiconductor devices operating in high frequency circuits and showed that significant performance improvement can be achieved by replacing silicon with gallium arsenide, silicon carbide, or semiconducting diamond.
Journal ArticleDOI
Optimum semiconductors for high-power electronics
TL;DR: In this article, the peak electric field strength at avalanche breakdown was used as a critical material parameter for evaluating the quality of a semiconducting material for high-power electronics, and it was shown that SiC and diamond could offer significant advantages compared to either silicon or group III-V compound semiconductors for these applications.
Journal ArticleDOI
Trends in power semiconductor devices
TL;DR: In this paper, the authors review recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems and predict that silicon carbide based switches will begin to displace these silicon devices.
References
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Journal ArticleDOI
AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p‐n JUNCTIONS IN Ge, Si, GaAs, AND GaP
Simon M. Sze,G. Gibbons +1 more
Journal ArticleDOI
Field-effect transistor versus analog transistor (static induction transistor)
TL;DR: The Static Induction Transistor (SIT) as discussed by the authors is a transistor similar to that of the vacuum tube triode type that exhibits the nonsaturated build-up character only when the internal negative feedback action is as little as G{m'} \simeq G_{m}.
Journal ArticleDOI
The preparation and properties of vapor- deposited epitaxial InAs sub 1-x P sub x using arsine and phosphine.
James J. Tietjen,James A. Amick +1 more
TL;DR: Vapor phase epitaxial production of indium arsenic phosphide crystalline layers, discussing electron mobilities, electrical resistivities and doping as mentioned in this paper, is discussed in detail in detail.
Patent
Silicon integrated circuits
TL;DR: In this article, a dynamic random access memory (DRAM) is proposed in which individual cells, including an access transistor and a storage capacitor, are formed in mesas formed on a silicon chip.
Journal ArticleDOI
Optimum doping profile for minimum ohmic resistance and high-breakdown voltage
TL;DR: In this article, the authors derived the optimum doping profile of a lightly doped layer that introduces the minimum series resistance and sustains a given junction breakdown voltage, which applies to a one-dimensional Schottky diode and qualitatively to the collector or drain doping profiles of transistors.