Journal ArticleDOI
CaF2 surface passivation of lead selenide grown on BaF2
TLDR
In this paper, a surface passivation of PbSe epitaxial layers by growing a thin CaF2 layer is proposed, and improvement in photoluminescence (PL) intensity is observed when the pbSe layer is passivated.About:
This article is published in Microelectronic Engineering.The article was published on 2011-03-01. It has received 4 citations till now. The article focuses on the topics: Passivation & Lead selenide.read more
Citations
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Journal ArticleDOI
Responsivity enhancement of mid-infrared PbSe detectors using CaF2 nano-structured antireflective coatings
TL;DR: In this article, the CaF2 nano-structures grown by thermal vapor deposition are presented and significant responsivity improvement (>200%) of mid-infrared PbSe detectors incorporating a 200-nm nano-structure was observed.
Journal ArticleDOI
Lead Selenide Polycrystalline Coatings Sensitized Using Diffusion and Ion Beam Methods for Uncooled Mid-Infrared Photodetection
TL;DR: In this paper, an overview and evaluation of the preparations, physical effects, properties, and potential applications, as well as the optoelectronic enhancement mechanism, of lead selenide polycrystalline coatings are presented.
Journal ArticleDOI
Structural and electrical properties of semimagnetic semiconductors Pb1−xYbxSe thin films
A. Hmood,A. Kadhim,H. Abu Hassan +2 more
TL;DR: In this article, a semimagnetic semiconductor Pb1−xYbxSe compound was synthesized via solid-state microwave plasma assisted technique using pure powder forms of elemental Pb, Se, and Yb.
Journal ArticleDOI
Enhanced performance in uncooled n-CdSe/p-PbSe photovoltaic detectors by high-temperature chloride passivation
TL;DR: In this article , a high-temperature chloride passivation (HTCP) was proposed to improve the crystalline quality and electrical properties of PbSe epitaxial films, which was implemented in a CdSe/PbSe heterojunction PV detector, which exhibits a room temperature peak detectivity D* of 8.5 × 108 cm Hz 1/2 W−1 in the mid-wavelength infrared region under blackbody radiation (227 °C).
References
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Journal ArticleDOI
Fast recombination processes in lead chalcogenide semiconductors studied via transient optical nonlinearities
TL;DR: In this paper, the third-order optical nonlinearities and recombination processes of photoexcited electron-hole plasma in PbSe and PbTe were directly monitored by picosecond pump-probe experiments in the wavelength range from 3 to 10 μm.
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Electrochemical sulfur passivation of GaAs
TL;DR: In this article, an anodic sulfurized treatment of GaAs has been developed to passivate its surfaces preventing oxidation, and the results of photoluminescence spectra verify that the passivated surface has low surface recombination velocity and can protect the photoassisted oxidation under laser illumination.
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Surface recombination, free-carrier saturation, and dangling bonds in InP and GaAs
TL;DR: In this article, a comparison of the average dangling bond energy between InP and GaAs was made to determine the location of the maximum density of surface states in the bandgap and control the formation of native amphoteric defects which compensate shallow dopants.
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Minority-carrier transport parameters in n-type silicon
TL;DR: In this article, the diffusion length, lifetime tau, and diffusion coefficient of n-type Si were measured at 296 K in the doping range from 10/sup 18/ cm/sup -3/ to 7*10/sup 19/cm/sup −3/.