Journal ArticleDOI
Surface recombination, free-carrier saturation, and dangling bonds in InP and GaAs
TLDR
In this article, a comparison of the average dangling bond energy between InP and GaAs was made to determine the location of the maximum density of surface states in the bandgap and control the formation of native amphoteric defects which compensate shallow dopants.Abstract:
Surface recombination and free-carrier saturation both influence the performance and scaling of bipolar semiconductor devices. These two apparently unrelated material properties have a common origin in the band structure of the semiconductor. Although InP and GaAs have similar bandgaps as well as similar effective masses and dielectric constants, InP has dramatically different surface recombination velocities and free-carrier saturation limits than GaAs. These differences can be explained by a single comparison of the average dangling bond energy in the two materials. The dangling bond energy determines the location of the maximum density of surface states in the bandgap and controls the formation of native amphoteric defects which compensate shallow dopants. Semiquantitative predictions based on this principle are presented for InGaAsP/InP.read more
Citations
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Journal ArticleDOI
Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system
Junqiao Wu,Wladek Walukiewicz,Kin Man Yu,W. Shan,Joel W. Ager,Eugene E. Haller,Hai Lu,William J. Schaff,Wyatt K. Metzger,Sarah Kurtz +9 more
TL;DR: In this paper, the optical and electronic properties of the In1−xGaxN alloys have been investigated and shown to exhibit a much higher resistance to high energy (2 MeV) proton irradiation than the standard currently used photovoltaic materials such as GaAs and GaInP, and therefore offer great potential for radiation-hard high-efficiency solar cells for space applications.
Journal ArticleDOI
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
Hannah J. Joyce,Callum J. Docherty,Qiang Gao,Hark Hoe Tan,Chennupati Jagadish,James Lloyd-Hughes,Laura M. Herz,Michael B. Johnston +7 more
TL;DR: A comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy will assist in the choice of nanowire materials for different applications, and identify the challenges in producing nanOWires suitable for future electronic and optoelectronic devices.
Journal ArticleDOI
Structure and electronic properties of InN and In-rich group III-nitride alloys
Wladek Walukiewicz,Joel W. Ager,Kin Man Yu,Zuzanna Liliental-Weber,Junqiao Wu,S. X. Li,S. X. Li,R. E. Jones,R. E. Jones,Jonathan D. Denlinger +9 more
TL;DR: The experimental study of InN and In-rich InGaN by a number of structural, optical and electrical methods is reviewed in this article, where the electron effective mass in InN is interpreted in terms of a non-parabolic conduction band caused by the k · p interaction across the narrow gap.
Journal ArticleDOI
Room temperature continuous-wave lasing in photonic crystal nanocavity
Masahiro Nomura,Satoshi Iwamoto,Katsuyuki Watanabe,Naoto Kumagai,Y. Nakata,Satomi Ishida,Yasuhiko Arakawa +6 more
TL;DR: Three-dimensional carrier confinement and a low transparent carrier density due to volume effect in a quantum dot system play important roles in the cw laser operation at room temperature as well as a high quality factor photonic crystal nanocavity.
Journal ArticleDOI
Ultralow Surface Recombination Velocity in InP Nanowires Probed by Terahertz Spectroscopy
Hannah J. Joyce,Jennifer Wong-Leung,Chaw-Keong Yong,Callum J. Docherty,Suriati Paiman,Suriati Paiman,Qiang Gao,Hark Hoe Tan,Chennupati Jagadish,James Lloyd-Hughes,Laura M. Herz,Michael B. Johnston +11 more
TL;DR: Using transient terahertz photoconductivity measurements, it is found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires.
References
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Journal ArticleDOI
Schottky Barrier Heights and the Continuum of Gap States
TL;DR: In this paper, the Schottky barrier heights for metal-semiconductor interfaces with a variety of metals have been calculated, and they are in excellent agreement with experiment for interfaces with various metals.
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Unified defect model and beyond
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Acoustic deformation potentials and heterostructure band offsets in semiconductors.
Manuel Cardona,N. E. Christensen +1 more
TL;DR: In this paper, it is argued that the absolute hydrostatic deformation potentials for tetrahedral semiconductors with the linear muffin-tin-orbital method must be screened by the dielectric response of the material before using them to calculate electron-phonon interaction.