Characterization of free carbon in the as-thermolyzed Si-B-C-N ceramic from a polyorganoborosilazane precursor

TLDR: In this article, the structure of polyorganoborosilazane (B[C2H4-Si(CH3)NH]3) was characterized using X-ray diffraction (XRD) and Raman spectroscopy.

Abstract: Polyorganoborosilazane ((B[C2H4-Si(CH3)NH]3) n ) was synthesized via monomer route from a single-source precursor and thermolyzed at 1300 °C in argon atmosphere. The as-thermolyzed Si-B-C-N ceramic was characterized using X-ray diffraction (XRD) and Raman spectroscopy. The crystallization behavior of silicon carbide in the as-thermolyzed amorphous Si-B-C-N matrix was understood by XRD studies, and the crystallite size calculated using Scherrer equation was found to increase from 2 nm to 8 nm with increase in dwelling time. Concomitantly, Raman spectroscopy was used to characterize the free carbon present in the as-thermolyzed ceramic. The peak positions, intensities and full width at half maximum (FWHM) of D and G bands in the Raman spectra were used to study and understand the structural disorder of the free carbon. The G peak shift towards 1600 cm−1 indicated the decrease in cluster size of the free carbon. The cluster diameter of the free carbon calculated using TK (Tuinstra and Koenl) equation was found to decrease from 6.2 nm to 5.4 nm with increase in dwelling time, indicating increase in structural disorder.