Journal ArticleDOI
Characterization of thin-oxide MNOS memory transistors
Marvin H. White,J.R. Cricchi +1 more
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TLDR
In this paper, a direct tunneling theory is formulated and applied to high-speed thin-oxide complementary metal-nitride-oxide-silicon (MNOS) memory transistors.Abstract:
A direct tunneling theory is formulated and applied to high-speed thin-oxide complementary metal-nitride-oxide-silicon (MNOS) memory transistors. Charge transport in the erase/write mode of operation is interpreted in terms of the device threshold voltage shift. The threshold voltage shift in the erase/write mode is related to the amplitude and time duration of the applied gate voltage over the full range of switching times. MNOS memory devices ( X_{o}=25 \Aring, X_{N} = 335 \Aring ) exhibit a \Delta V_{th} = \plusmn3 V for an erase/write t_{p} = 100 ns, which corresponds to an initial oxide field strength E_{ox}= 1.2 \times 10^{7} V/cm. The direct tunneling theory is applied to the charge retention or memory mode in which charge is transported to and from the Si-SiO 2 interface states. The rate of charge loss to interface states is influenced by electrical stress which alters the interface state characteristics. We discuss the fabrication of complementary high-speed MNOS memory transistors and the experimental test procedures to measure charge transport and storage in these devices.read more
Citations
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Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties
TL;DR: In this article, the authors summarized some of the essential aspects of silicon-nanowire growth and of their electrical properties, including the expansion of the base of epitaxially grown Si wires, a stability criterion regarding the surface tension of the catalyst droplet, and the consequences of the Gibbs-Thomson effect for the silicon wire growth velocity.
Journal ArticleDOI
Growth, thermodynamics, and electrical properties of silicon nanowires.
TL;DR: A comparison study of the reaction of gold-like and Au-like catalysts in the presence of low Si Solubility solvent and that of a solvent with high solubility, finds that the latter results in higher purity than the former.
Journal ArticleDOI
On the go with SONOS
Marvin H. White,D.A. Adams,J. Bu +2 more
TL;DR: In this article, the authors discuss scaled SONOS devices, memory technology, and applications of these devices in nonvolatile semiconductor memories (NVSMs) with low voltage, fast erase/write, improved memory retention, increased endurance, and radiation hardness.
Journal ArticleDOI
Imaging devices using the charge-coupled concept
TL;DR: A unified treatment of the basic electrostatic and dynamic design of charge-coupled devices (CCD's) based on approximate analytical analysis is presented and tradeoffs in area-array performance from a systems point of view and performance predictions are presented.
Journal ArticleDOI
Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures
TL;DR: In this paper, an analytical model for charge retention of the excess electron state is developed based on experimental observations and an amphoteric trap model for nitride traps, using this thermal activated electron retention model, the trap distribution in energy within the nitride film is extracted.
References
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Quantum mechanics
TL;DR: The blackbody radiation problem was solved by Max Planck as mentioned in this paper, who showed that radiation was not continuous but discrete, coming in lumps known as quanta, which became known as Planck's constant and led to the correct prediction of the blackbody spectrum.
Journal ArticleDOI
Fowler‐Nordheim Tunneling into Thermally Grown SiO2
M. Lenzlinger,E. H. Snow +1 more
TL;DR: In this article, the relative effective mass in the forbidden energy gap was found to be about 0.4, which is lower by a factor of five to ten than the expected values, probably due to trapping effects.
Journal ArticleDOI
Characteristics of the Surface‐State Charge (Qss) of Thermally Oxidized Silicon
TL;DR: In this paper, the surface state charge associated with thermally oxidized silicon has been studied experimentally using MOS structures and the results indicate that the surface-state charge can be reproducibly controlled over a range 1010-1012 cm -2, and it is an intrinsic property of the silicon dioxide-silicon system.