Journal ArticleDOI
Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals
Florian Schmidt,Stefan Müller,H. von Wenckstern,Christof P. Dietrich,R. Heinhold,H-S Kim,Martin W. Allen,Marius Grundmann +7 more
TLDR
In this article, the electrical properties of a ZnO microwire, a thin film and a hydrothermally grown bulk crystal were compared by means of deep-level transient spectroscopy.Abstract:
Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V Zn is likely involved in this defect.read more
Citations
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Journal ArticleDOI
Deep vs shallow nature of oxygen vacancies and consequent n -type carrier concentrations in transparent conducting oxides
John Buckeridge,Charles Richard Catlow,Matthew R. Farrow,Andrew J. Logsdail,David O. Scanlon,Thomas W. Keal,Paul Sherwood,Scott M. Woodley,Alexey A. Sokol,Aron Walsh +9 more
TL;DR: In this paper, the formation and ionization energies of oxygen vacancies in three representative transparent conducting oxides (In 2 O 3, SnO 2, and ZnO) were computed using a hybrid quantum mechanical/molecular mechanical embedded cluster approach.
Journal ArticleDOI
Spatially-resolved cathodoluminescence spectroscopy of ZnO defects
Leonard J. Brillson,William Ruane,Hantian Gao,Yuanyao Zhang,J. Luo,H. von Wenckstern,Marius Grundmann +6 more
TL;DR: Spatially resolved cathodoluminescence spectroscopy has contributed significant new information to our understanding of native point defects in ZnO micro-and nanoscale structures as discussed by the authors.
Book ChapterDOI
Analytical techniques for electrically active defect detection
TL;DR: In this paper, a review of analytical techniques for the detection of electrically active defects in semiconductor materials is presented, where the operation principles, the strengths, and the weaknesses are outlined and illustrated for state-of-the-art examples.
Journal ArticleDOI
Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry
Steffen Richter,Oliver Herrfurth,Shirly Espinoza,Mateusz Rebarz,Miroslav Kloz,Joshua Leveillee,Andre Schleife,Stefan Zollner,Marius Grundmann,Jakob Andreasson,Rüdiger Schmidt-Grund,Rüdiger Schmidt-Grund +11 more
TL;DR: In this article, a broadband pump-probe ellipsometry was used to obtain the real and imaginary part of the transient dielectric function which was compared with first-principles simulations.
Journal ArticleDOI
Shallow carrier traps in hydrothermal ZnO crystals
Cuong Ton-That,L. L. C. Lem,Matthew R. Phillips,F. Reisdorffer,J. Mevellec,Thien-Phap Nguyen,Christian Nenstiel,Axel Hoffmann +7 more
TL;DR: In this article, a qualitative model is developed which explains the Y line structural defects, which act as an electron trap with an activation energy of 11 meV, being responsible for the anomalous temperature-dependent cathodoluminescence of H-doped ZnO.
References
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Residual Native Shallow Donor in ZnO
TL;DR: In this paper, the authors show that Zn-sublattice defect is the dominant native shallow donor in ZnO and quantitatively explain the high displacement threshold energy.
Journal ArticleDOI
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David C. Look,David C. Look,G. C. Farlow,Pakpoom Reunchan,Sukit Limpijumnong,Shengbai Zhang,Kai Nordlund +6 more
TL;DR: It is shown that, under N ambient, the complex Zn(I)-N(O) is a stronger candidate than H or any other known impurity for a 30 meV donor commonly found in bulk ZnO grown from the vapor phase.
Journal ArticleDOI
Point defects in ZnO: an approach from first principles
TL;DR: Overall defect energetics suggests a preference for the native donor-type defects over acceptor- type defects in ZnO, which is likely to play essential roles in electrical properties.