Journal ArticleDOI
Controlled growth of SiGe nanowires by addition of HCl in the gas phase
A. Potié,Thierry Baron,Laurence Latu-Romain,G. Rosaz,Bassem Salem,Laurent Montès,Pascal Gentile,Jens Kreisel,Hervé Roussel +8 more
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TLDR
In this article, a qualitative model based on the experimental results is proposed to explain the role of HCl during the growth of Si, Ge, and alloyed nanowires.Abstract:
Growth of Si, Ge, and, thus, SiGe nanowires (NWs) by catalyzed chemical vapor deposition proceeds at different process conditions, preventing easy realization of axial multijunctions interesting for device realization. In this paper, we propose a common process to obtain both Si, Ge, and alloyed NWs simply by adding HCl in the gas phase. It is demonstrated that addition of HCl during the growth improves the structural quality of the SiGe NWs, avoids the tapering of NWs by decreasing the uncatalyzed growth, increases the Ge fraction of the SiGe alloy NWs, and decreases the growth rate. A qualitative model based on the experimental results is proposed to explain the role of HCl during the growth. This model can be more generally applied to explain the tendency observed in the literature concerning the growth of SiGe alloyed NWs without HCl. It is based on a competition between adsorption, decomposition, and incorporation of Si and Ge in the catalyst. This competition is mainly regulated by the gas phase composition and by the reaction between the reactive species and the catalyst surface.read more
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Silicon-germanium nanowires: chemistry and physics in play, from basic principles to advanced applications.
TL;DR: Basic Principles to Advanced Applications Michele Amato,*, Maurizia Palummo,*,‡ Riccardo Rurali,* and Stefano Ossicini.
Journal ArticleDOI
Fabrication of silicon nanowire networks for biological sensing
TL;DR: In this paper, the fabrication of random networks based on silicon nanowires by the filtration method was reported for the first time and the so-fabricated networks are reproducible and homogeneous, the nanowire density is easily monitored.
Journal ArticleDOI
Composition-Dependent Interfacial Abruptness in Au-Catalyzed Si1–xGex/Si/Si1–xGex Nanowire Heterostructures
P. Periwal,P. Periwal,N. V. Sibirev,N. V. Sibirev,Gilles Patriarche,Bassem Salem,Bassem Salem,Franck Bassani,Franck Bassani,Vladimir G. Dubrovskii,Vladimir G. Dubrovskii,Vladimir G. Dubrovskii,Thierry Baron,Thierry Baron +13 more
TL;DR: A kinetic model for the layer-by-layer growth of nanowire heterostructures from a ternary Au-Ge-Si alloy is established that predicts a discrepancy in Ge concentration in the layer and the catalyst droplet, and shows no strong Ge dependence at the Si1-xGex/Si interface.
Journal ArticleDOI
Direct integration of metal oxide nanowires into an effective gas sensing device.
Alberto Vomiero,Andrea Ponzoni,Elisabetta Comini,Matteo Ferroni,Guido Faglia,Giorgio Sberveglieri +5 more
TL;DR: The results foresee the possibility of growth and integration of nanowire bundles directly into devices, overcoming the need for expensive and time-consuming nanomanipulation techniques.
Journal ArticleDOI
Planar Growth, Integration, and Applications of Semiconducting Nanowires.
TL;DR: The unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.
References
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Book
CRC Handbook of Chemistry and Physics
TL;DR: CRC handbook of chemistry and physics, CRC Handbook of Chemistry and Physics, CRC handbook as discussed by the authors, CRC Handbook for Chemistry and Physiology, CRC Handbook for Physics,
Journal ArticleDOI
Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
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High-mobility Si and Ge structures
TL;DR: In this article, the structural and electronic properties of lattice-mismatched Si/SiGe heterostructures are discussed in terms of scattering mechanisms and experimental results, and an assessment of the possible role of such heterodevices in future microelectronic circuits is given.
Journal ArticleDOI
Programmable nanowire circuits for nanoprocessors
Hao Yan,Hwan Sung Choe,SungWoo Nam,Yongjie Hu,Shamik Das,James F. Klemic,James C. Ellenbogen,Charles M. Lieber +7 more
TL;DR: An architecture to integrate the programmable nanowire FETs and define a logic tile consisting of two interconnected arrays with 496 functional configurable FET nodes in an area of ∼960 μm2, representing a significant advance in the complexity and functionality of nanoelectronic circuits built from the bottom up with a tiled architecture that could be cascaded to realize fully integrated nanoprocessors with computing, memory and addressing capabilities.
Journal ArticleDOI
Measurements of alloy composition and strain in thin GexSi1−x layers
TL;DR: In this paper, the utility of Raman spectroscopy for the simultaneous determination of composition and strain in thin GexSi1−x layers has been investigated using data from the literature and new data for the strain shift of the SiSi phonon mode presented here.