Journal ArticleDOI
High-mobility Si and Ge structures
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In this article, the structural and electronic properties of lattice-mismatched Si/SiGe heterostructures are discussed in terms of scattering mechanisms and experimental results, and an assessment of the possible role of such heterodevices in future microelectronic circuits is given.Abstract:
Silicon-based heterostructures have come a long way from the discovery of strain as a new and essential parameter for band structure engineering to the present state of electron and hole mobilities, which surpass those achieved in the traditional material combination by more than an order of magnitude and are rapidly approaching the best III - V heteromaterials. It is the purpose of this article to report on the most recent developments, and the performance level achieved to date in this material system, in a concise and critical manner. The first part of this review is concerned with the structural and electronic properties of the lattice-mismatched Si/SiGe heterostructure. Emphases are put on the effects of strain both on the band structure and on the band offsets, as well as on means to actually control the strain in a stack of heteroepitaxial layers. The second part is dedicated to the transport properties of low-dimensional carrier systems in Si/SiGe and Ge/SiGe heterostructures. The prospects and limitations of the different layer concepts are discussed in terms of scattering mechanisms and experimental results. This part also reviews the most recent magneto-transport experiments on quantum wires and quantum point contacts, which became possible by the enhanced mean free paths in these materials. The third part covers the device aspects of these high-mobility materials, which is of special interest, because silicon-based heterostructures can significantly enhance the performance level of contemporary Si devices without sacrificing the essential compatibility with standard Si technologies. The recent achievements in this application-driven research field, but also the foreseeable problems and limitations, are discussed, and an assessment of the possible role of such heterodevices in future microelectronic circuits is given.read more
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Journal ArticleDOI
Silicon quantum electronics
Floris A. Zwanenburg,Andrew S. Dzurak,Andrea Morello,Michelle Y. Simmons,Lloyd C. L. Hollenberg,Gerhard Klimeck,Sven Rogge,Susan Coppersmith,Mark A. Eriksson +8 more
TL;DR: In this paper, a review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based quantum dots, and highlights the remarkable advances in Sibased quantum physics that have occurred in the past few years.
Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.
Journal ArticleDOI
Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
Yu-Hsuan Kuo,Yong Kyu Lee,Yangsi Ge,Shen Ren,Jonathan E. Roth,Theodore I. Kamins,Theodore I. Kamins,David A. B. Miller,James S. Harris +8 more
TL;DR: The discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture.
Journal ArticleDOI
One-dimensional hole gas in germanium/silicon nanowire heterostructures
TL;DR: The synthesis and transport studies of a 1D hole gas system based on a free-standing germanium/silicon (Ge/Si) core/shell nanowire heterostructure are reported and a "0.7 structure" is observed, suggesting the universality of this phenomenon in interacting 1D systems.
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