Journal ArticleDOI
Crystal structure and optical absorption investigations on β-In2S3 thin films
TLDR
In this article, the crystal structure of annealed β-In 2 S 3 thin films with different thickness was investigated by X-ray diffraction technique, and the lattice parameters, crystallite size and microstrain were calculated.About:
This article is published in Thin Solid Films.The article was published on 2006-12-05. It has received 40 citations till now. The article focuses on the topics: Lattice constant & Dielectric.read more
Citations
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Journal ArticleDOI
Combinatorial Reactive Sputtering of In2S3 as an Alternative Contact Layer for Thin Film Solar Cells
Sebastian Siol,Tara P. Dhakal,Ganesh Sainadh Gudavalli,Pravakar P. Rajbhandari,Clay DeHart,Lauryn L. Baranowski,Andriy Zakutayev +6 more
TL;DR: Results demonstrate how a high-throughput experimental approach can be used to accelerate the development of contact materials and facilitate the optimization of thin film solar cell devices.
Journal ArticleDOI
Effect of precursor concentration on physical properties of nebulized spray deposited In2S3 thin films
J. Raj Mohamed,L. Amalraj +1 more
TL;DR: In this article, the effect of precursor concentration (mc) on the structural, optical, morphological and electrical conductivity properties of In2S3 thin films grown on amorphous glass substrates by nebulized spray pyrolysis (NSP) technique was investigated.
Journal ArticleDOI
Effect of thermal annealing on physical properties of vacuum evaporated In2S3 buffer layer for eco-friendly photovoltaic applications
TL;DR: In this paper, the effect of thermal annealing on the physical properties of In2S3 thin films for eco-friendly buffer layer photovoltaic applications is reported.
Journal ArticleDOI
Synthesis and characterization of nanocrystallized In2S3 thin films via CBD technique
TL;DR: In this paper, X-ray diffraction, scanning electron microscopy and atomic force microscopy techniques are used to examine the effect of experimental conditions on the structure and morphology of indium sulphide thin films.
Journal ArticleDOI
The fabrication of In2O3/In2S3/Ag nanocubes for efficient photoelectrochemical water splitting.
Rui Xu,Haohua Li,Wenwen Zhang,Zepeng Yang,Guiwu Liu,Ziwei Xu,Haicheng Shao,Guanjun Qiao,Guanjun Qiao +8 more
TL;DR: In this work, for the first time, a three-component In2O3/In2S3/Ag nanocomposite heterostructured photoanode is prepared on a F-doped SnO2 (FTO) glass substrate and exhibits significantly enhanced photoelectrochemical properties.
References
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Journal ArticleDOI
A Profile-Fitting Procedure for Analysis of Broadened X-ray Diffraction Peaks. I. Methodology
TL;DR: In this paper, a convolutive profile-fitting procedure is described for analysing X-ray diffraction peak profiles broadened by microstructural factors (crystallite size and lattice disorder).
Journal ArticleDOI
Optical energy gaps of β-In2S3 thin films grown by spray pyrolysis
Wha-Tek Kim,Chang-Dae Kim +1 more
TL;DR: The energy gap of the grown β•In2S3 thin film was 2.20 eV, indicating an indirect transition as mentioned in this paper, whereas that of In2S9 increased to 2.43 eV.
Journal ArticleDOI
Chemical bath deposition of indium sulphide thin films: preparation and characterization
Chandrakant D. Lokhande,Ahmed Ennaoui,Pramod S. Patil,Michael Giersig,K. Diesner,M Muller,Helmut Tributsch +6 more
TL;DR: In this paper, a deposition mechanism of In2S3 thin films from thioacetamide deposition bath has been proposed, and the results showed that the as-deposited films were photoactive as evidenced by TRMC studies.
Journal ArticleDOI
On the conduction mechanism in single crystal β-indium sulfide In2S3
W. Rehwald,G. Harbeke +1 more
TL;DR: In this paper, the electrical resistivity and Hall-coefficient on a single crystal In 2 S 3, grown by chemical transport reaction, revealed that these quantities determined at room temperature cover more than six decades.
Journal ArticleDOI
Growth of In2S3 thin films by atomic layer epitaxy
TL;DR: In this paper, a polycrystalline β-In2S3 having a band gap of 2.3 eV was deposited by ALE using InCl3 and H2S as precursors.