Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
Corinna Martinella,Roger Stark,Thomas Ziemann,Ruben Garcia Alia,Yacine Kadi,Ulrike Grossner,Arto Javanainen +6 more
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In this paper, an electrical model was proposed to explain the current transport mechanism for heavy-ion degraded SiC power MOSFETs, which confirmed the degradation of the gate oxide and the blocking capability of the devices.Abstract:
High sensitivity of silicon-carbide (SiC) power MOSFETs has been observed under heavy-ion irradiation, leading to permanent increase of drain and gate leakage currents. The electrical postirradiation analysis confirmed the degradation of the gate oxide and the blocking capability of the devices. At low drain bias, the leakage path is formed between drain and gate, while at higher bias the heavy-ion-induced leakage path is mostly from drain to source. An electrical model is proposed to explain the current transport mechanism for heavy-ion degraded SiC power MOSFETs.read more
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Journal ArticleDOI
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
Corinna Martinella,Thomas Ziemann,Roger Stark,Alexander Tsibizov,Kay-Obbe Voss,Ruben Garcia Alia,Yacine Kadi,Ulrike Grossner,Arto Javanainen +8 more
TL;DR: In this paper, heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy.
Proceedings ArticleDOI
Space Radiation Effects on SiC Power Device Reliability
TL;DR: In this article, a large body of heavy-ion test data for different diode, power MOSFET, and JFET devices is presented and the susceptibility to single event effects is compared between SiC and Si power devices.
Journal ArticleDOI
Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
C. Martinella,Ruben Garcia Alia,Roger Stark,Andrea Coronetti,Carlo Cazzaniga,Maria Kastriotou,Yacine Kadi,R. Gaillard,Ulrike Grossner,Arto Javanainen +9 more
TL;DR: In this paper, the authors performed accelerated terrestrial neutron irradiation on different commercial SiC power MOSFETs with planar, trench, and double-trench architectures, and the results were used to calculate the failure cross sections and the failurein-time (FIT) rates at sea level.
Journal ArticleDOI
Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment
Kimmo Niskanen,R. Coq Germanicus,A. Michez,Frédéric Wrobel,Jerome Boch,Frédéric Saigné,Antoine Touboul +6 more
TL;DR: In this article, the mechanisms responsible for neutron-induced single-event burnout (SEB) in commercial silicon carbide power MOSFETs under atmospheric-like neutron spectrum were investigated and analyzed.
Journal ArticleDOI
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
Kimmo Niskanen,Antoine Touboul,R. Coq Germanicus,A. Michez,Arto Javanainen,Frédéric Wrobel,Jerome Boch,Vincent Pouget,Frédéric Saigné +8 more
TL;DR: In this paper, the combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs were studied, and the single-event burnout sensitivity during neutron radiation was analyzed for unstressed and electrically stressed devices.
References
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Journal ArticleDOI
Status and prospects for SiC power MOSFETs
TL;DR: In this article, the authors review the evolution of SiC power MOSFETs between 1992 and the present, discuss the current status of device development, identify the critical fabrication issues, and assess the prospects for continued progress and eventual commercialization.
Journal ArticleDOI
Heavy-Ion-Induced, Gate-Rupture in Power MOSFETs
TL;DR: In this article, a new, heavy ion-induced, burnout mechanism has been experimentally observed in power metaloxide-semiconductor field effect transistors (MOSFETs).
Journal ArticleDOI
Investigation of single-event damages on silicon carbide (SiC) power MOSFETs
TL;DR: In this article, the authors demonstrated that permanent damage (increase in both drain and gate leakage current) was observed similar to SiC Schottky Barrier diodes in a silicon carbide power MOSFET.
Journal ArticleDOI
A conceptual model of a single-event gate-rupture in power MOSFETs
J.R. Brews,M. Allenspach,Ronald D. Schrimpf,Kenneth F. Galloway,Jeffrey L. Titus,C.F. Wheatley +5 more
TL;DR: In this paper, the authors proposed a physical model of hole-collection following a heavy-ion strike to explain the development of oxide fields sufficient to cause single-event gate rupture (SEGR) in power MOSFETs.
Journal ArticleDOI
Single-Event Burnout Mechanisms in SiC Power MOSFETs
Arthur F. Witulski,Dennis R. Ball,Kenneth F. Galloway,Arto Javanainen,Jean-Marie Lauenstein,Andrew L. Sternberg,Ronald D. Schrimpf +6 more
TL;DR: In this paper, the authors investigated SEB in high-voltage silicon carbide power MOSFETs and showed a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm2/mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage.