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Open AccessJournal ArticleDOI

Demonstration of submicron square-like silicon waveguide using optimized LOCOS process

Boris Desiatov, +2 more
- 30 Aug 2010 - 
- Vol. 18, Iss: 18, pp 18592-18597
TLDR
The design, fabrication and experimental characterization of a submicron-scale silicon waveguide that is fabricated by local oxidation of silicon is demonstrated and the low loss characteristics of the waveguide are demonstrated by imaging the light scattering using an infrared camera.
Abstract
We demonstrate the design, fabrication and experimental characterization of a submicron-scale silicon waveguide that is fabricated by local oxidation of silicon. The use of local oxidation process allows defining the waveguide geometry and obtaining smooth sidewalls. The process can be tuned to precisely control the shape and the dimensions of the waveguide. The fabricated waveguides are measured using near field scanning optical microscope at 1550 nm wavelength. These measurements show mode width of 0.4 µm and effective refractive index of 2.54. Finally, we demonstrate the low loss characteristics of our waveguide by imaging the light scattering using an infrared camera.

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Citations
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Silicon-chip mid-infrared frequency comb generation

TL;DR: It is reported that the first on-chip integrated mid-infrared frequency comb using a silicon optical parametric oscillator ring resonator is reported, and a 750-nm-wide comb centered at 2.6 um is demonstrated.
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Locally Oxidized Silicon Surface-Plasmon Schottky Detector for Telecom Regime

TL;DR: An on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths and can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on- chip.
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On-Chip Integrated, Silicon–Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

TL;DR: An on-chip integrated metal graphene–silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency is reported, paving the way to graphene integrated silicon photonics.
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Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band

TL;DR: The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.
Journal ArticleDOI

Nanoscale plasmonic memristor with optical readout functionality.

TL;DR: A nanoscale resistive random access memory (RRAM) electronic device integrated with a plasmonic waveguide providing the functionality of optical readout and the experimental characterization shows optical bistable behavior between these levels of transmission in addition to well-defined hysteresis.
References
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Ultracompact optical buffers on a silicon chip

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Journal ArticleDOI

Low loss etchless silicon photonic waveguides

TL;DR: In this paper, a low-loss silicon waveguide fabricated without any silicon etching is presented, which produces ultra-smooth sidewalls with width variations of 0.3 nm.
Proceedings ArticleDOI

Low loss etchless silicon photonic waveguides

TL;DR: Low loss silicon waveguides fabricated without silicon etching by selective oxidation are demonstrated, showing propagation losses of 0.3dB/cm, roughness of0.3 nm RMS, and 0.0002 dB loss for a 90deg bend with 20 mum bending radius.
Journal ArticleDOI

Low-loss silicon-on-insulator shallow-ridge TE and TM waveguides formed using thermal oxidation

TL;DR: A thermal oxidation fabrication technique is employed to form low-loss high-index-contrast silicon shallow-ridge waveguides in silicon-on-insulator (SOI) with maximally tight vertical confinement, with implications for sensor devices in particular.
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