Journal ArticleDOI
Dependence of absorption spectrum and responsivity on the upper state position in quantum well intersubband photodetectors
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TLDR
In this paper, the authors derived analytical results for the intersubband absorption quantum efficiency, which take into account contributions from both bound-to-bound state and bound−to-continuum state transitions.Abstract:
Analytical results are derived for the intersubband absorption quantum efficiency, which take into account contributions from both bound‐to‐bound state and bound‐to‐continuum state transitions. Including the final state lifetime broadening, the absorption spectrum gradually decreases in peak strength and becomes broader from the pure bound‐to‐bound case to the pure bound‐to‐continuum situation. The physical reason for the divergence in absorption strength when the upper state is in resonance with the top of the barrier and in the absence of broadening is discussed. The detector current responsivity as a function of well width (and hence upper state position) is estimated. Calculated examples are given, covering the crossover region from the bound‐to‐bound case to the bound‐to‐continuum case. Our results compare well with experiments.read more
Citations
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Journal ArticleDOI
Quantum Cascade Detectors
Fabrizio R. Giorgetta,Esther Baumann,M. Graf,Quankui Yang,Christian Manz,Klaus Köhler,Harvey E. Beere,David A. Ritchie,Edmund H. Linfield,Alexander Giles Davies,Yuriy Fedoryshyn,Heinz Jäckel,Milan Fischer,Jérôme Faist,Daniel Hofstetter +14 more
TL;DR: In this article, an overview on the design, fabrication, and characterization of quantum cascade detectors is given. But the authors do not discuss the performance of the quantum cascade detector at wavelengths from the near infrared at 2 mum to THz radiation at 87 mum.
Journal ArticleDOI
Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
TL;DR: In this paper, the intersubband photocurrent spectroscopy of self-assembled InAs/GaAs quantum dots (QDs) both in normal incidence and in multipass waveguide geometry is reported.
Journal ArticleDOI
How good is the polarization selection rule for intersubband transitions
TL;DR: Using GaAs-based infrared photodetectors (QWIPs) with either GaAs or InGaAs wells, the accuracy of the polarization selection rule for conduction band intersubband transitions was investigated in this article.
Journal ArticleDOI
Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors
TL;DR: In this paper, the Si δ doping profile smears in the growth direction resulting in an asymmetric broadening of about 27 A in the observed forward and reverse currentvoltage characteristics.
Journal ArticleDOI
High-frequency quantum-well infrared photodetectors measured by microwave-rectification technique
TL;DR: In this paper, the authors explore the high-frequency capability of quantum-well infrared photodetectors using a microwave-rectification technique and show that the intrinsic photoconductive lifetime for these devices in the high biasing field regime is in the range of 5-6 ps.
References
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Journal ArticleDOI
First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
L. C. West,S. J. Eglash +1 more
TL;DR: In this paper, a dipole occurs between two envelope states of the conduction-band electron wave function, and is called a quantum well envelope state transition (QWEST).
Journal ArticleDOI
New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices
TL;DR: In this article, a 10.8 μm superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs was proposed, which achieved a narrow bandwidth (10%) photosensitivity with a responsivity of 0.52 A/W and an estimated speed of 30 ps.
Journal ArticleDOI
High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors
TL;DR: In this article, a GaAs quantum well infrared detector having a cutoff wavelength of λc=10.7 μm was used to achieve a blackbody detectivity of 1.0×1010 cm (Hz) 1/2/W at T=68 K, a temperature which is readily achievable with a cryogenic cooler.
Journal ArticleDOI
New mode of IR detection using quantum wells
D. D. Coon,R. P. G. Karunasiri +1 more
TL;DR: In this paper, a new mode of IR detection using photoemission from a single quantum well is proposed and optimization of the device performance by the proper choice of parameters is discussed.
Book ChapterDOI
Intersubband transitions in quantum wells
TL;DR: In this article, the potential energy profile in semiconductor heterostructures can now be controlled in a fascinating way that could barely be dreamed of twenty years ago, and many devices have been designed according to this quantum engineering and have shown unsurpassed properties.
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