Journal ArticleDOI
Design of InGaN-ZnSnN2 quantum wells for high-efficiency amber light emitting diodes
Rezaul Karim,Hongping Zhao +1 more
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In this article, the authors proposed an InGaN-ZnSnN2-based quantum well (QW) structure for high efficiency amber (λ∼∼ 600 nm) light emitting diodes (LEDs), which remains a great challenge in pure GaN-based LEDs.Abstract:
InGaN-ZnSnN2 based quantum wells (QWs) structure is proposed and studied as an active region for high efficiency amber (λ ∼ 600 nm) light emitting diodes (LEDs), which remains a great challenge in pure InGaN based LEDs. In the proposed InGaN-ZnSnN2 QW heterostructure, the thin ZnSnN2 layer serves as a confinement layer for the hole wavefunction utilizing the large band offset at the InGaN-ZnSnN2 interface in the valence band. The barrier layer is composed of GaN or AlGaN/GaN in which the thin AlGaN layer is used for a better confinement of the electron wavefunction in the conduction band. Utilizing the properties of band offsets between ZnSnN2 and InGaN, the design of InGaN-ZnSnN2 QW allows us to use much lower In-content (∼10%) to reach peak emission wavelength at 600 nm, which is unachievable in conventional InGaN QW LEDs. Furthermore, the electron-hole wavefunction overlap (Γe-h) for the InGaN-ZnSnN2 QW design is significantly increased to 60% vs. 8% from that of the conventional InGaN QW emitting at the same wavelength. The tremendous enhancement in electron-hole wavefunction overlap results in ∼225× increase in the spontaneous emission radiative recombination rate of the proposed QW as compared to that of the conventional one using much higher In-content. The InGaN-ZnSnN2 QW structure design provides a promising route to achieve high efficiency amber LEDs.InGaN-ZnSnN2 based quantum wells (QWs) structure is proposed and studied as an active region for high efficiency amber (λ ∼ 600 nm) light emitting diodes (LEDs), which remains a great challenge in pure InGaN based LEDs. In the proposed InGaN-ZnSnN2 QW heterostructure, the thin ZnSnN2 layer serves as a confinement layer for the hole wavefunction utilizing the large band offset at the InGaN-ZnSnN2 interface in the valence band. The barrier layer is composed of GaN or AlGaN/GaN in which the thin AlGaN layer is used for a better confinement of the electron wavefunction in the conduction band. Utilizing the properties of band offsets between ZnSnN2 and InGaN, the design of InGaN-ZnSnN2 QW allows us to use much lower In-content (∼10%) to reach peak emission wavelength at 600 nm, which is unachievable in conventional InGaN QW LEDs. Furthermore, the electron-hole wavefunction overlap (Γe-h) for the InGaN-ZnSnN2 QW design is significantly increased to 60% vs. 8% from that of the conventional InGaN QW emitting at t...read more
Citations
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Journal ArticleDOI
Perfect short-range ordered alloy with line-compound-like properties in the ZnSnN2:ZnO system
Jie Pan,Jacob Cordell,Jacob Cordell,Garritt J. Tucker,Andriy Zakutayev,Adele C. Tamboli,Stephan Lany +6 more
TL;DR: In this article, the dual-sublattice-mixed semiconductor alloy was modeled as a disordered solid solution, which is a disorderly solid solution but offers many ordered line-compound features.
Journal Article
Perfect short-range ordered alloy with line-compound-like properties in the ZnSnN 2 :ZnO system
TL;DR: In this paper, the dual-sublattice-mixed semiconductor alloy (ZnSnN2) is modeled as a disordered solid solution with line compound features.
Journal ArticleDOI
Effects of built-in electric field on donor binding energy in InGaN/ZnSnN2 quantum well structures
TL;DR: In this paper, the binding energy and the energy of the transition between the impurity states are represented as a function of the quantum well width, the donor position, and the indium concentration.
Journal ArticleDOI
Type-II AlInN/ZnGeN2 quantum wells for ultraviolet laser diodes
TL;DR: In this article, a type-II AlInN/ZnGeN2 quantum well (QW) structure serving as the active region for ultraviolet (UV) laser diodes was proposed.
Journal ArticleDOI
Band Structure Engineering Based on InGaN/ZnGeN2 Heterostructure Quantum Wells for Visible Light Emitters
Rezaul Karim,Benthara Hewage Dinushi Jayatunga,Kaitian Zhang,Menglin Zhu,Jinwoo Hwang,Kathleen Kash,Hongping Zhao +6 more
TL;DR: In this article, a band structure engineering based on InGaN/ZnGeN2 heterostructure quantum wells (QWs) was proposed to address the long-standing charge separation challenge in visible light emitters using polar inGaN...
References
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