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Detecting topological currents in graphene superlattices

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TLDR
The authors measured the transport characteristics of the sample, which were consistent with the theoretical predictions for the VHE, and observed the long-range character of topological currents and their transistor-like control by means of gate voltage can be exploited for information processing based on valley degrees of freedom.
Abstract
Making use of graphene's valleys Graphene has two distinct valleys in its electronic structure, in which the electrons have the same energy. Theorists have predicted that creating an asymmetry between the two valleys will coax graphene into exhibiting the so-called valley Hall effect (VHE). In this effect, electrons from the two valleys move across the sample in opposite directions when the experimenters run current along the sample. Gorbachev et al. achieved this asymmetry by aligning graphene with an underlying layer of hexagonalboron nitride (hBN) (see the Perspective by Lundeberg and Folk). The authors measured the transport characteristics of the sample, which were consistent with the theoretical predictions for the VHE. The method may in the future lead to information processing using graphene's valleys. Science, this issue p. 448; see also p. 422 Graphene is aligned with a layer of hexagonal boron nitride to achieve the valley Hall effect. [Also see Perspective by Lundeberg and Folk] Topological materials may exhibit Hall-like currents flowing transversely to the applied electric field even in the absence of a magnetic field. In graphene superlattices, which have broken inversion symmetry, topological currents originating from graphene’s two valleys are predicted to flow in opposite directions and combine to produce long-range charge neutral flow. We observed this effect as a nonlocal voltage at zero magnetic field in a narrow energy range near Dirac points at distances as large as several micrometers away from the nominal current path. Locally, topological currents are comparable in strength with the applied current, indicating large valley-Hall angles. The long-range character of topological currents and their transistor-like control by means of gate voltage can be exploited for information processing based on valley degrees of freedom.

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Hydrodynamic approach to two-dimensional electron systems

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Tunable and giant valley-selective Hall effect in gapped bilayer graphene

TL;DR: Yin et al. as mentioned in this paper reported the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-ofplane electric field.
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Observation of long-range orbital transport and giant orbital torque

TL;DR: In this article , it was shown that orbital currents propagate over longer distances than spin currents by more than an order of magnitude in a ferromagnet and non-magnets and that the orbital current enables electric manipulation of magnetization with efficiencies significantly higher than the spin counterpart.

Electronic, Spin and Valley Transport in Two Dimensional Dirac Systems

Hongya Xu
TL;DR: In this article, the authors studied the electronic, spin and valley transport in two-dimensional Dirac systems for different given physical settings and found that these modes can be utilized to form a robust relativistic quantum two-level system.
References
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Proceedings Article

Physics of semiconductor devices

S. M. Sze
Journal ArticleDOI

Spintronics: Fundamentals and applications

TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
Journal ArticleDOI

Quantum spin Hall effect in graphene

TL;DR: Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
Journal ArticleDOI

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

TL;DR: In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.
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