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Journal ArticleDOI

Development of Nickel-Based Negative Tone Metal Oxide Cluster Resists for Sub-10 nm Electron Beam and Helium Ion Beam Lithography.

TLDR
The Ni-MOCs based resist investigated under HIBL and EBL elucidates the ability of its potential for sub-10 nm technology node, under standard processing conditions.
Abstract
Hybrid metal–organic cluster resist materials, also termed as organo-inorganics, demonstrate their potential for use in next-generation lithography owing to their ability for patterning down to ∼10...

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Journal ArticleDOI

Helium-ion-beam nanofabrication: extreme processes and applications

TL;DR: A review of the latest developments in HIB technology as well as its extreme processing capabilities and widespread applications in nanofabrication can be found in this article, where four thematic applications of HIB are discussed: (1) helium ion microscopy imaging for biological samples and semiconductors; (2) HIB-induced deposition for nanopillars, nanowires, and 3D nanostructures; (4) additional HIB direct writing for resist, graphene, and plasmonic nanostructure.
Journal ArticleDOI

Top-down nanofabrication approaches toward single-digit-nanometer scale structures

TL;DR: In this paper, the authors discuss the recent advances in top-down nanofabrication methods towards single-digit-nanometer-sized structures and discuss state-of-the-art applications for sub-10 nm nanophotonics such as optical trapping or sensing devices, imaging devices, and electronic devices.
Journal ArticleDOI

Scalable Fabrication of Metallic Nanogaps at the Sub-10 nm Level

TL;DR: In this article, some of the most promising techniques for nanogap fabrication are evaluated, covering established technologies such as photolithography, electron-beam lithography (EBL), and focused ion beam (FIB) milling, plus a number of newer methods that use novel electrochemical and mechanical means to effect the patterning.
Journal ArticleDOI

Resists for Helium Ion Beam Lithography: Recent Advances

TL;DR: In this paper, the fabrication of micro-/nanoelectronic devices are marching toward ultralow node technology with dense patterns to meet the current industry demands, continuous advancement is needed in ter...
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Organoiodine Functionality Bearing Resists for Electron-Beam and Helium Ion Beam Lithography: Complex and Sub-16 nm Patterning

TL;DR: In this paper, the current need for resist materials for patterning transistors with ultralow nodes has been addressed and a quest for developing resists with improved performance for nanoscale patterning with goo...
References
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Journal ArticleDOI

The Evolution of Silicon Wafer Cleaning Technology

TL;DR: In this article, the evolution of silicon wafer cleaning processes and technology is traced and reviewed from the 1950s to August 1989, from simple immersion to centrifugal spraying, megasonic techniques, and enclosed system processing that allow simultaneous removal of both contaminant films and particles.
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Rapid microwave-assisted green synthesis of 3D hierarchical flower-shaped NiCo₂O₄ microsphere for high-performance supercapacitor.

TL;DR: The desirable integrated performance enables NiCo2O4 microspheres to be a promising electrode material for the electrochemical supercapacitor (EC) with high specific capacitance, enhanced rate capability, and excellent electrochemical stability.
Journal ArticleDOI

Helium ion microscope: A new tool for nanoscale microscopy and metrology

TL;DR: In this article, the authors developed a new helium ion microscope which has many advantages over both traditional scanning electron microscopes (SEMs) and focused ion beams (FIBs).
Journal ArticleDOI

Subsurface damage from helium ions as a function of dose, beam energy, and dose rate

TL;DR: In this article, the authors consider the potential for sample damage from a charged particle beam and describe the potential applications operating regimes of such a system, as a function of dose, dose rate, and beam energy.
Journal ArticleDOI

Sub-10-nm nanolithography with a scanning helium beam

TL;DR: In this article, a pattern definition technique for dense sub-10-nm structures is presented, in terms of high resolution, high sensitivity, and a low proximity effect in a hydrogen silsesquioxane resist.
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