Journal ArticleDOI
Direct parameter-extraction method for HBT small-signal model
Reads0
Chats0
TLDR
In this paper, an accurate and broadband method for the direct extraction of heterojunction bipolar transistor (HBT) small-signal model parameters is presented, which differs from previous ones by extracting the equivalent-circuit parameters without using special test structures or global numerical optimization techniques.Abstract:
An accurate and broadband method for the direct extraction of heterojunction bipolar transistor (HBT) small-signal model parameters is presented in this paper. This method differs from previous ones by extracting the equivalent-circuit parameters without using special test structures or global numerical optimization techniques. The main advantage of this method is that a unique and physically meaningful set of intrinsic parameters is extracted from the measured S-parameters for the whole frequency range of operation. The extraction procedure uses a set of closed-form expressions derived without any approximation. An equivalent circuit for the HBT under a forward-bias condition is proposed for extraction of access resistances and parasitic inductances. An experimental validation on a GaInP/GaAs HBT device with a 2/spl times/25 /spl mu/m emitter was carried out, and excellent results were obtained up to 30 GHz. The calculated data-fitting residual error for three different bias points over 1-30 GHz was less then 2%.read more
Citations
More filters
Journal ArticleDOI
A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs
Qingqing Liang,John D. Cressler,Guofu Niu,Yuan Lu,Gregory G. Freeman,David C. Ahlgren,Ramana M. Malladi,K. Newton,David L. Harame +8 more
TL;DR: In this article, a new four-port scattering parameter (S-parameter) and broad-band noise deembedding methodology is presented, which considers distributed on-wafer parasitics in the millimeter-wave band (f>30GHz).
Journal ArticleDOI
A peeling algorithm for extraction of the HBT small-signal equivalent circuit
TL;DR: In this paper, a new extraction method for the extrinsic capacitances is proposed, which has proven to be the main source of uncertainty compared to the other intrinsic parameters.
Journal ArticleDOI
Direct parameter extraction of SiGe HBTs for the VBIC bipolar compact model
TL;DR: An improved direct parameter extraction method of SiGe heterojunction bipolar transistors (HBTs) for the vertical bipolar intercompany (VBIC)-type hybrid-/spl pi/ model is developed in this paper.
Journal ArticleDOI
An RF model of the accumulation-mode MOS varactor valid in both accumulation and depletion regions
Seong-Sik Song,Hyungcheol Shin +1 more
TL;DR: In this article, an RF model of an accumulationmode MOS varactor with physical lumped elements derived from the device structure is presented, and the channel resistance is modeled by three resistance components to cover both accumulation and depletion regions with single equivalent circuit.
Journal ArticleDOI
Broad-band HBT BPSK and IQ modulator MMICs and millimeter-wave vector signal characterization
TL;DR: Reflection-type binary phase-shift keying and in-phase and quadrature modulator monolithic microwave integrated circuits (MMICs) are reported in this article.
References
More filters
Proceedings ArticleDOI
An improved de-embedding technique for on-wafer high-frequency characterization
TL;DR: In this paper, an improved correction procedure for on-wafer S-parameter measurements has been developed and implemented, which takes the effects of series parasitics into account in a simple, straightforward way.
Journal ArticleDOI
Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit
TL;DR: In this paper, a direct technique for determining the small-signal equivalent circuit of a heterojunction bipolar transistor (HBT) is described, where the parasitic elements are largely determined from measurements of test structures.
Direct Extraction of the AlGaAs/GaAs Heterojunction Bipolar Transis tor Small- S ig nal Equivalent Circuit
TL;DR: In this paper, a technique for determining the small-signal equivalent-circuit model of an AIGaAs/GaAs heterojunction bipolar transistor (HBT) is presented.
Journal ArticleDOI
Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data
D.R. Pehlke,Dimitris Pavlidis +1 more
TL;DR: In this article, a parameter extraction formalism for the evaluation of heterojunction bipolar transistor (HBT) device physics is presented, which uses analytically derived expressions for direct calculation of the HBT T-model equivalent circuit element values in terms of the measured S-parameters.
Journal ArticleDOI
A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor
TL;DR: In this paper, a simple small-signal equivalent circuit for the heterojunction bipolar transistor (HBT) is proposed, which uses a direct extraction method to determine the parasitic elements, in particular the parasitic capacitances.
Related Papers (5)
Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors
Ce-Jun Wei,James C. M. Hwang +1 more